Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

1998 ◽  
Vol 83 (6) ◽  
pp. 3144-3147 ◽  
Author(s):  
R. B. Dunford ◽  
Dragana Popović ◽  
Fred H. Pollak ◽  
Thomas F. Noble
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Electron Density ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Electron ◽  
High Electron Density ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

scholarly journals AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

JETP Letters ◽  
2019 ◽  
Vol 110 (1) ◽  
pp. 68-73 ◽  
Author(s):  
A. A. Dmitriev ◽  
I. L. Drichko ◽  
I. Yu. Smirnov ◽  
A. K. Bakarov ◽  
A. A. Bykov
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Dc Conductivities ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Integer quantum Hall effect in a PbTe quantum well

2006 ◽  
Vol 34 (1-2) ◽  
pp. 124-127 ◽  
Author(s):  
V.A. Chitta ◽  
W. Desrat ◽  
D.K. Maude ◽  
B.A. Piot ◽  
N.F. Oliveira ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

2005 ◽  
Vol 72 (19) ◽  
Author(s):  
V. A. Chitta ◽  
W. Desrat ◽  
D. K. Maude ◽  
B. A. Piot ◽  
N. F. Oliveira ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
Sign in / Sign up

Export Citation Format

Share Document