Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

2004 ◽  
Vol 3 (12) ◽  
pp. 868-871 ◽  
Author(s):  
Shinji Yuasa ◽  
Taro Nagahama ◽  
Akio Fukushima ◽  
Yoshishige Suzuki ◽  
Koji Ando
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

2001 ◽  
Vol 89 (11) ◽  
pp. 6751-6753 ◽  
Author(s):  
Stephan Kreuzer ◽  
Werner Wegscheider ◽  
Dieter Weiss
Keyword(s):  
Single Crystal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Crystal Gaas

scholarly journals Very low 1∕f noise at room temperature in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 91 (23) ◽  
pp. 232504 ◽  
Author(s):  
F. G. Aliev ◽  
R. Guerrero ◽  
D. Herranz ◽  
R. Villar ◽  
F. Greullet ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

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