scholarly journals Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%

Nature Energy ◽  
2016 ◽  
Vol 1 (6) ◽  
Author(s):  
Yuan Zhao ◽  
Mathieu Boccard ◽  
Shi Liu ◽  
Jacob Becker ◽  
Xin-Hao Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cdte Solar Cells

Double Open-Circuit Voltage of Three-Dimensional ZnO/CdTe Solar Cells by a Balancing Depletion Layer

2014 ◽  
Vol 6 (16) ◽  
pp. 14718-14723 ◽  
Author(s):  
Jing-Jing Wang ◽  
Tao Ling ◽  
Shi-Zhang Qiao ◽  
Xi-Wen Du
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Three Dimensional ◽  
Open Circuit ◽  
Depletion Layer ◽  
Cdte Solar Cells

scholarly journals Measurement of band offsets and shunt resistance in CdTe solar cells through temperature and intensity dependence of open circuit voltage and photoluminescence

Solar Energy ◽  
2019 ◽  
Vol 189 ◽  
pp. 389-397 ◽  
Author(s):  
Craig H. Swartz ◽  
Sadia R. Rab ◽  
Sanjoy Paul ◽  
Maikel F.A.M. van Hest ◽  
Benjia Dou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Shunt Resistance ◽  
Band Offsets ◽  
Intensity Dependence ◽  
Cdte Solar Cells

Electron Reflector Strategy for Thin CdTe Solar Cells

2009 ◽  
Vol 1210 ◽  
Author(s):  
Kuo-Jui Hsiao ◽  
James R. Sites
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Electron Flow ◽  
Surface Recombination ◽  
Open Circuit ◽  
One Dimension ◽  
Back Surface ◽  
Hole Density ◽  
Fully Depleted ◽  
Cdte Solar Cells

AbstractIncorporation of an electron reflector is a proposed strategy to improve the open-circuit voltage of CdTe thin-film solar cells. An electron reflector is basically a conduction-band barrier at the back surface, which can reduce the recombination resulting from the electron flow to the back surface. It should be particularly beneficial for cells with thicknesses below two microns when the CdTe absorber layer is fully depleted at its typical carrier density, because back-surface recombination is a primary limitation to the performance of fully depleted cells. Cells with thickness below two microns can also benefit from optical reflection at the back interface. One-dimension numerical simulation is used to investigate the electron reflector strategy and optical back reflection for thin CdTe cells. Theoretically, about a 200-mV increase in voltage and 3% in efficiency are achievable for a thin CdTe solar cell with 2×1014-cm-3 hole density, 1-ns lifetime, and a 0.2-eV electron reflector barrier. Furthermore, with the electron reflector, good CdTe cell performance at thicknesses as thin as 0.4 μm should be possible.

CdTe solar cells with open-circuit voltage breaking the 1 V barrier

Nature Energy ◽  
2016 ◽  
Vol 1 (3) ◽  
Author(s):  
J. M. Burst ◽  
J. N. Duenow ◽  
D. S. Albin ◽  
E. Colegrove ◽  
M. O. Reese ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cdte Solar Cells

scholarly journals Erratum: Corrigendum: CdTe solar cells with open-circuit voltage breaking the 1 V barrier

Nature Energy ◽  
2016 ◽  
Vol 1 (5) ◽  
Author(s):  
J. M. Burst ◽  
J. N. Duenow ◽  
D. S. Albin ◽  
E. Colegrove ◽  
M. O. Reese ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cdte Solar Cells

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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