scholarly journals Efficient optical extraction of hot-carrier energy

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
S. Saeed ◽  
E. M. L. D. de Jong ◽  
K. Dohnalova ◽  
T. Gregorkiewicz
Keyword(s):  
Hot Carrier ◽  
Carrier Energy ◽  
Optical Extraction

Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Science ◽  
2020 ◽  
pp. eabb3457 ◽  
Author(s):  
Harsha Reddy ◽  
Kun Wang ◽  
Zhaxylyk Kudyshev ◽  
Linxiao Zhu ◽  
Shen Yan ◽  
...  
Keyword(s):  
Single Molecule ◽  
Plasmonic Nanostructures ◽  
Hot Carriers ◽  
Energy Distributions ◽  
Nanoscale Systems ◽  
Hot Carrier ◽  
Transport Measurements ◽  
Single Molecule Junctions ◽  
Molecule Transport ◽  
Carrier Energy

Hot-carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications like photocatalysis and in photodetectors that circumvent band-gap limitations. However, direct experimental quantification of steady-state energy distributions of hot-carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultra-thin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

2015 ◽  
Vol 106 (18) ◽  
pp. 183505 ◽  
Author(s):  
V. Palankovski ◽  
S. Vainshtein ◽  
V. Yuferev ◽  
J. Kostamovaara ◽  
V. Egorkin
Keyword(s):  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTION IN GaAs AND AlGaAs

1988 ◽  
pp. 443-446
Author(s):  
R.W. Schoenlein ◽  
W.Z. Lin ◽  
S.D. Brorson ◽  
E.P. Ippen ◽  
J.G. Fujimoto
Keyword(s):  
Energy Redistribution ◽  
Hot Carrier ◽  
Carrier Energy

Femtosecond hot carrier energy redistribution in GaAs and AlGaAs

1988 ◽  
Vol 31 (3-4) ◽  
pp. 443-446 ◽  
Author(s):  
R.W. Schoenlein ◽  
W.Z. Lin ◽  
S.D. Brorson ◽  
E.P. Ippen ◽  
J.G. Fujimoto
Keyword(s):  
Energy Redistribution ◽  
Hot Carrier ◽  
Carrier Energy

Hot-Carrier Energy Losses in a Silicon p–n–p Bipolar Transistor

1999 ◽  
Vol 172 (2) ◽  
pp. 407-414
Author(s):  
L. A. Kosyachenko ◽  
M. P. Mazur ◽  
E. G. Mishchenko
Keyword(s):  
Bipolar Transistor ◽  
Energy Losses ◽  
Hot Carrier ◽  
Carrier Energy

scholarly journals Influence of Hot Carrier and Thermal Components on Photovoltage Formation across the p–n Junction

2020 ◽  
Vol 10 (21) ◽  
pp. 7483
Author(s):  
Jonas Gradauskas ◽  
Steponas Ašmontas ◽  
Algirdas Sužiedėlis ◽  
Aldis Šilėnas ◽  
Viktoras Vaičikauskas ◽  
...  
Keyword(s):  
Linear Time ◽  
Junction Temperature ◽  
Hot Carrier ◽  
Linear Time Invariant ◽  
Carrier Energy ◽  
Energy Relaxation Time ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Linear Time Invariant System ◽  
Time Invariant

In the present work we reveal the existence of the hot carrier photovoltage induced across a p–n junction in addition to the classical carrier generation-induced and thermalization-caused photovoltages. On the basis of the solution of the differential equation of the first-order linear time-invariant system, we propose a model enabling to disclose the pure value of each photovoltage component. The hot carrier photovoltage is fast since it is determined by the free carrier energy relaxation time (which is of the order of 10−12 s), while the thermal one, being conditioned by the junction temperature change, is relatively slow; and both of them have a sign opposite to that of the electron-hole pair generation-induced component. Simultaneous coexistence of the components is evidenced experimentally in GaAs p–n junction exposed to pulsed 1.06 μm laser light. The work is remarkable in two ways: first, it shows that creation of conditions unfavorable for the rise of hot carrier photovoltage might improve the efficiency of a single junction solar cell, and second, it should inspire the photovoltaic society to revise the Shockley–Queisser limit by taking into account the damaging impact of the hot carrier photovoltage.

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