scholarly journals Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
M. G. Kibria ◽  
S. Zhao ◽  
F. A. Chowdhury ◽  
Q. Wang ◽  
H. P. T. Nguyen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Fermi Level ◽  
Water Splitting ◽  
Overall Water Splitting ◽  
P Type ◽  
Surface Fermi Level

Fermi Level Inhomogeneities on GaAs(110) Surface Imaged with a Photoelectron Microscope

1992 ◽  
Vol 260 ◽  
Author(s):  
Changyoung Kim ◽  
Paul L. King ◽  
Piero Pianetta
Keyword(s):  
Fermi Level ◽  
Optical Microscope ◽  
Level Energy ◽  
Band Bending ◽  
Highly Correlated ◽  
P Type ◽  
Low Coverage ◽  
Lateral Variations ◽  
Surface Fermi Level ◽  
Better Than

ABSTRACTA photoelectron microscope operating with a retarding field analyzer has been used to exploit core level energy shifts due to band bending in order to directly image Fermi level variations on n- and p-type cleaved GaAs(110) surfaces. Fermi level maps resolved to better than 10 um indicate lateral variations in the surface Fermi level which are often quite abrupt. In agreement with earlier, lower resolution work [1], Fermi level topography is found to be highly correlated with surface roughness as characterized by SEM, optical microscope and stylus profi lometer. The largest defect derived pinnings encountered to date resut in the Fermi level lying 0.5 eV above the VBM for both n- and p-type GaAs. Low coverage In evaporations have the. effect of reducing Fermi level contrast as Fermi levels in formerly unpinned regions move into the gap.

Photocatalytic Overall Water Splitting on Gallium Nitride Powder

2007 ◽  
Vol 80 (5) ◽  
pp. 1004-1010 ◽  
Author(s):  
Kazuhiko Maeda ◽  
Kentaro Teramura ◽  
Nobuo Saito ◽  
Yasunobu Inoue ◽  
Kazunari Domen
Keyword(s):  
Gallium Nitride ◽  
Water Splitting ◽  
Nitride Powder ◽  
Overall Water Splitting

Improvement of efficiency in graphene/gallium nitride nanowire on Silicon photoelectrode for overall water splitting

2017 ◽  
Vol 422 ◽  
pp. 354-358 ◽  
Author(s):  
Hyojung Bae ◽  
Hokyun Rho ◽  
Jung-Wook Min ◽  
Yong-Tak Lee ◽  
Sang Hyun Lee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Water Splitting ◽  
Overall Water Splitting

Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1067-1071 ◽  
Author(s):  
Tetsuo Kurayama ◽  
Gennki Sano ◽  
Masamichi Sakai
Keyword(s):  
Fermi Level ◽  
Abrupt Change ◽  
P Type ◽  
Surface Fermi Level

scholarly journals Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
M. G. Kibria ◽  
F. A. Chowdhury ◽  
S. Zhao ◽  
B. AlOtaibi ◽  
M. L. Trudeau ◽  
...  
Keyword(s):  
Visible Light ◽  
Water Splitting ◽  
Nanowire Arrays ◽  
Metal Nitride ◽  
Overall Water Splitting ◽  
Visible Light Driven ◽  
P Type

Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces

1992 ◽  
Vol 10 (1) ◽  
pp. 131-136 ◽  
Author(s):  
X. Yin ◽  
H‐M. Chen ◽  
F. H. Pollak ◽  
Y. Chan ◽  
P. A. Montano ◽  
...  
Keyword(s):  
Fermi Level ◽  
P Type ◽  
Surface Fermi Level
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