scholarly journals High-temperature antiferromagnetism in molecular semiconductor thin films and nanostructures

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Michele Serri ◽  
Wei Wu ◽  
Luke R. Fleet ◽  
Nicholas M. Harrison ◽  
Cyrus F. Hirjibehedin ◽  
...  
2006 ◽  
Vol 300 (2) ◽  
pp. 407-411 ◽  
Author(s):  
Nikoleta Theodoropoulou ◽  
Vinith Misra ◽  
John Philip ◽  
Patrick LeClair ◽  
Geetha P. Berera ◽  
...  

1998 ◽  
Vol 102 (23) ◽  
pp. 4516-4525 ◽  
Author(s):  
John C. Conboy ◽  
Eric J. C. Olson ◽  
David M. Adams ◽  
Josef Kerimo ◽  
Arie Zaban ◽  
...  

2010 ◽  
Vol 39 (8) ◽  
pp. 1125-1132 ◽  
Author(s):  
Je-Hyeong Bahk ◽  
Gehong Zeng ◽  
Joshua M. O. Zide ◽  
Hong Lu ◽  
Rajeev Singh ◽  
...  

2009 ◽  
pp. 35-60
Author(s):  
H. Brinkmann ◽  
C. Kelting ◽  
S. Makarov ◽  
O. Tsaryova ◽  
G. Schnurpfeil ◽  
...  

Author(s):  
Robert R. Reeber ◽  
Kai Wang

Thermoelastic properties are important for modeling thermal residual stresses and for optimizing the growth conditions of semiconductor thin films. Thermal expansions of AlN and GaN have been evaluated and predicted by us earlier [1][2]. Here, high temperature elastic constants are estimated empirically from corresponding state relationships and data from other hexagonal Grimm-Sommerfeld compounds. This information together with our earlier thermal expansion data will further improve capabilities for calculating thermal residual stresses in various semiconductor thin films.


2008 ◽  
Vol 205 (3) ◽  
pp. 409-420 ◽  
Author(s):  
H. Brinkmann ◽  
C. Kelting ◽  
S. Makarov ◽  
O. Tsaryova ◽  
G. Schnurpfeil ◽  
...  

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