scholarly journals Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Jangyup Son ◽  
Soogil Lee ◽  
Sang Jin Kim ◽  
Byung Cheol Park ◽  
Han-Koo Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Monolayer Graphene ◽  
Wide Band Gap ◽  
Effect Transistor

Ultra-wide band gap AlGaN polarization-doped field effect transistor

2018 ◽  
Vol 57 (7) ◽  
pp. 074103 ◽  
Author(s):  
Andrew M. Armstrong ◽  
Brianna A. Klein ◽  
Albert Colon ◽  
Andrew A. Allerman ◽  
Erica A. Douglas ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Wide Band Gap ◽  
Effect Transistor

Band gap engineered nano perforated graphene microstructures for field effect transistor

2016 ◽  
Author(s):  
Penchalaiah Palla ◽  
Durgesh Laxman Tiwari ◽  
Hasan Raza Ansari ◽  
Taraprasanna Saha Babu ◽  
Anita Sagadevan Ethiraj ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Monolayer Graphene ◽  
Large Signal ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Rf Circuit

Monolayer-ReS2 field effect transistor using monolayer-graphene as electrodes

2019 ◽  
Vol 554 ◽  
pp. 35-39 ◽  
Author(s):  
Manman Liu ◽  
Lijie Zhang ◽  
Jieyuan Liang ◽  
Xiaoxiao Li ◽  
Youqing Dong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Monolayer Graphene ◽  
Effect Transistor

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

Monolayer Graphene Field Effect Transistor-Based Operational Amplifier

2019 ◽  
Vol 28 (03) ◽  
pp. 1950052
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Operational Amplifier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Design System ◽  
Monolayer Graphene ◽  
Characteristic Curves ◽  
Op Amp ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

scholarly journals Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

Nano Letters ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 3981-3986 ◽  
Author(s):  
Charlie Gréboval ◽  
Ulrich Noumbe ◽  
Nicolas Goubet ◽  
Clément Livache ◽  
Julien Ramade ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Narrow Band ◽  
Effect Transistor ◽  
Ionic Glasses

Package Design and Analysis for Vertical Gallium Nitride Field Effect Transistors

2021 ◽  
Vol 2021 (HiTEC) ◽  
pp. 000058-000063
Author(s):  
John Harris ◽  
David Huitink ◽  
Dan Ewing
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Development Stage ◽  
Wide Band Gap ◽  
Package Design ◽  
Bulk Gan ◽  
Effect Transistor

Abstract Gallium nitride (GaN) is a wide band gap semi-conductor with superior electron mobility to silicon carbide. These properties allow for the design of high temperature capable devices with excellent on resistance and breakdown voltage for their size. However, bulk GaN is difficult to fabricate and doping for field effect transistor (FET) control has been elusive, so vertical GaN devices are not commonplace. This paper measures the characteristics of vertical GaN FETs in the development stage and discusses packaging them for fabrication feedback and for future high temperature aplications.

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