Monolayer-ReS2 field effect transistor using monolayer-graphene as electrodes

2019 ◽  
Vol 554 ◽  
pp. 35-39 ◽  
Author(s):  
Manman Liu ◽  
Lijie Zhang ◽  
Jieyuan Liang ◽  
Xiaoxiao Li ◽  
Youqing Dong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Monolayer Graphene ◽  
Effect Transistor

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Monolayer Graphene ◽  
Large Signal ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Rf Circuit

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

Monolayer Graphene Field Effect Transistor-Based Operational Amplifier

2019 ◽  
Vol 28 (03) ◽  
pp. 1950052
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Operational Amplifier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cmos Technology ◽  
Design System ◽  
Monolayer Graphene ◽  
Characteristic Curves ◽  
Op Amp ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Graphene Field Effect Transistor (GFET) is a promising candidate for future high performance applications in the beyond CMOS roadmap for analog circuit applications. This paper presents a Verilog-A implementation of a monolayer graphene field-effect transistor (mGFET) model. The study of characteristic curves is carried out using advanced design system (ADS) tools. Validation of the model through comparison with measurements from the characteristic curves is carried out using Silvaco TCAD tools. Finally, the mGFET is used to design a GFET-based operational amplifier (Op-Amp). The GFET Op-Amp performances are tuned in term of the graphene channel length in order to obtain a reasonable gain and bandwidth. The main characteristics of the Op-Amp performance are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

scholarly journals Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Jangyup Son ◽  
Soogil Lee ◽  
Sang Jin Kim ◽  
Byung Cheol Park ◽  
Han-Koo Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Wide Band ◽  
Monolayer Graphene ◽  
Wide Band Gap ◽  
Effect Transistor

Photosensitivity of Monolayer Graphene-Base Field Effect Transistor

2018 ◽  
Author(s):  
Jowesh Avisheik Goundar ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Color Temperature ◽  
Monolayer Graphene ◽  
Light Illumination ◽  
Si Substrate ◽  
High Quality ◽  
Effect Transistor

The optical properties and device physics of monolayer graphene under light is investigated in this study. In order to understand the change of the electronic behavior of graphene under light, it was necessary to study from the most fundamental layer with high quality. Thus, it became mandatory to develop a highly efficient, low-cost fabrication process for synthesis of high-quality monolayer graphene. The high-quality monolayer graphene was grown on a copper foil using a low-pressure chemical vapor deposition (LP-CVD) method at temperature of 1035°C for 10 minutes. Acetylene was used as the precursor gas for the synthesis of monolayer graphene. Thin Pt/Au films were, then, deposited on a silicon dioxide/silicon (SiO2/Si) substrate using electron beam (EB) lithography which served as source and drain electrodes of a transistor. The synthesized graphene was, then, transferred to a SiO2/Si substrate using PMMA (polymethyl methacrylate)-assisted method. The quality of the synthesized graphene was validated using Raman spectroscopy. No significant D peak was observed in the Raman spectra of the synthesized graphene. This result validated the high quality of the transferred graphene. Next, the photo-sensitivity of G-FET was investigated under light source of color temperature of 2856 K at room temperature. The electron transfer characteristic of the fabricated G-FET was measured under dark and light illumination conditions. Finally, the graphene-based field effect transistor G-FET demonstrated an external photo responsivity of about 200 μA/W with a maximum photocurrent attained to be 0.2 μA at an incident luminance power of 1 mW. The active detection region of this sample was 1000 × 60 μm2.

scholarly journals RNA Detection Based on Graphene Field-Effect Transistor Biosensor

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Meng Tian ◽  
Shicai Xu ◽  
Junye Zhang ◽  
Xiaoxin Wang ◽  
Zhenhua Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Detection Sensitivity ◽  
Monolayer Graphene ◽  
Time Saving ◽  
Fast Analysis ◽  
Rna Detection ◽  
Graphene Field Effect Transistor ◽  
Label Free Detection ◽  
Effect Transistor

Graphene has attracted much attention in biosensing applications due to its unique properties. In this paper, the monolayer graphene was grown by chemical vapor deposition (CVD) method. Using the graphene as the electric channel, we have fabricated a graphene field-effect transistor (G-FET) biosensor that can be used for label-free detection of RNA. Compared with conventional method, the G-FET RNA biosensor can be run in low cost, be time-saving, and be miniaturized for RNA measurement. The sensors show high performance and achieve the RNA detection sensitivity as low as 0.1 fM, which is two orders of magnitude lower than the previously reports. Moreover, the G-FET biosensor can readily distinguish target RNA from noncomplementary RNA, showing high selectivity for RNA detection. The developed G-FET RNA biosensor with high sensitivity, fast analysis speed, and simple operation may provide a new feasible direction for RNA research and biosensing.

Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor

2019 ◽  
Vol 28 (14) ◽  
pp. 1950231
Author(s):  
Ali Safari ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transport Theory ◽  
Cmos Technology ◽  
Design System ◽  
Monolayer Graphene ◽  
Distributed Amplifier ◽  
Microwave Electronics ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8[Formula: see text]dB, an input/output return loss less than [Formula: see text]10[Formula: see text]dB, [Formula: see text]3[Formula: see text]dB bandwidth from DC up to 5[Formula: see text]GHz and a dissipation of about 60.45[Formula: see text]mW for a 1.5[Formula: see text]V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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