scholarly journals Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Boyd W. Veal ◽  
Seong Keun Kim ◽  
Peter Zapol ◽  
Hakim Iddir ◽  
Peter M. Baldo ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Conduction ◽  
Oxide Heterostructures ◽  
Vacancy Doping

Electrical Conduction in Thin Film Carbons.

1987 ◽  
Author(s):  
K. Sugihara ◽  
M. S. Dresselhaus
Keyword(s):  
Thin Film ◽  
Electrical Conduction

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

scholarly journals Oxygen vacancy doping of hematite analyzed by electrical conductivity and thermoelectric power measurements

2017 ◽  
Vol 1 (6) ◽  
Author(s):  
Jan Mock ◽  
Benjamin Klingebiel ◽  
Florian Köhler ◽  
Maurice Nuys ◽  
Jan Flohre ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Oxygen Vacancy ◽  
Thermoelectric Power ◽  
Power Measurements ◽  
Vacancy Doping

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures

2009 ◽  
Vol 26 (2) ◽  
pp. 027301 ◽  
Author(s):  
Han Peng ◽  
Jin Kui-Juan ◽  
Lü Hui-Bin ◽  
Jia Jin-Feng ◽  
Qiu Jie ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Transport Property ◽  
Perovskite Oxide ◽  
Oxide Heterostructures

scholarly journals Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control

2018 ◽  
Vol 20 (26) ◽  
pp. 17871-17880 ◽  
Author(s):  
Urmimala Dey ◽  
Swastika Chatterjee ◽  
A. Taraphder
Keyword(s):  
Oxygen Vacancy ◽  
Transport Properties ◽  
Oxygen Vacancies ◽  
Major Effect ◽  
Oxide Heterostructures ◽  
Key Players ◽  
Antisite Defects ◽  
Antisite Disorder

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players.

scholarly journals Oxygen vacancy induced structural evolution of SrFeO3−x epitaxial thin film from brownmillerite to perovskite

2018 ◽  
Vol 97 (7) ◽  
Author(s):  
Seulki Roh ◽  
Seokbae Lee ◽  
Myounghoon Lee ◽  
Yu-Seong Seo ◽  
Amit Khare ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Structural Evolution ◽  
Epitaxial Thin Film
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