scholarly journals Oxygen vacancy induced structural evolution of SrFeO3−x epitaxial thin film from brownmillerite to perovskite

2018 ◽  
Vol 97 (7) ◽  
Author(s):  
Seulki Roh ◽  
Seokbae Lee ◽  
Myounghoon Lee ◽  
Yu-Seong Seo ◽  
Amit Khare ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Structural Evolution ◽  
Epitaxial Thin Film

Epitaxial Thin-Film Spinel Oxides as Oxygen Reduction Electrocatalysts in Alkaline Media

2021 ◽  
Author(s):  
Yao Yang ◽  
Rui Zeng ◽  
Hanjong Paik ◽  
Ding-Yuan Kuo ◽  
Darrell G. Schlom ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Reduction ◽  
Alkaline Media ◽  
Epitaxial Thin Film ◽  
Spinel Oxides

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Effects of Bi:V ratio and oxygen pressure on BiVO4(010) epitaxial thin film preparation

2021 ◽  
pp. 413174
Author(s):  
Yuxin Shi ◽  
Pengwei Zhai ◽  
Lixiang Meng ◽  
Zongyin Huang ◽  
Guoqiang Li
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Epitaxial Thin Film ◽  
Thin Film Preparation ◽  
Film Preparation

scholarly journals Epitaxial thin-film Pd1-xFex alloy: a tunable ferromagnet for superconducting spintronics

2020 ◽  
Author(s):  
Alireza Esmaeili ◽  
Igor V. Yanilkin ◽  
Amir I. Gumarov ◽  
Iskander R. Vakhitov ◽  
Bulat F. Gabbasov ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Thin Film

On the solutions of a fourth order parabolic equation modeling epitaxial thin film growth

2016 ◽  
Vol 66 (3) ◽  
Author(s):  
Ning Duan ◽  
Xiaopeng Zhao ◽  
Xiufang Zhao
Keyword(s):  
Thin Film ◽  
Parabolic Equation ◽  
Fourth Order ◽  
Film Growth ◽  
Thin Film Growth ◽  
Equation Modeling ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Order Parabolic Equation ◽  
Fourth Order Parabolic Equation

AbstractIn this paper, we study the existence and uniqueness of global weak solution, the regularity of the solutions and the existence of global attractor for a fourth order parabolic equation modeling epitaxial thin film growth with Neumann boundary conditions in two space dimensions.

EPITAXIAL GROWTH OF SrF2 ON Ge(111)-c(2×8) AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

1999 ◽  
Vol 06 (06) ◽  
pp. 1085-1089 ◽  
Author(s):  
S. OMORI ◽  
T. KOZAKAI ◽  
Y. NIHEI
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Atomic Structure ◽  
Forward Scattering ◽  
Epitaxial Thin Film ◽  
Photoelectron Diffraction ◽  
Interference Fringes

We have investigated the photoelectron diffraction (PED) from a SrF 2 epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Spin lattice relaxation of 8Li in a ferromagnetic EuO epitaxial thin film

2009 ◽  
Vol 404 (5-7) ◽  
pp. 619-621 ◽  
Author(s):  
Q. Song ◽  
K.H. Chow ◽  
M. Egilmez ◽  
I. Fan ◽  
M.D. Hossain ◽  
...  
Keyword(s):  
Thin Film ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Epitaxial Thin Film ◽  
Spin Lattice
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