scholarly journals Interface dynamics and crystal phase switching in GaAs nanowires

Nature ◽  
2016 ◽  
Vol 531 (7594) ◽  
pp. 317-322 ◽  
Author(s):  
Daniel Jacobsson ◽  
Federico Panciera ◽  
Jerry Tersoff ◽  
Mark C. Reuter ◽  
Sebastian Lehmann ◽  
...  
Keyword(s):  
Crystal Phase ◽  
Interface Dynamics ◽  
Phase Switching ◽  
Gaas Nanowires

Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism

2011 ◽  
Vol 99 (8) ◽  
pp. 083114 ◽  
Author(s):  
Ning Han ◽  
Alvin T. Hui ◽  
Fengyun Wang ◽  
Jared J. Hou ◽  
Fei Xiu ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Crystal Phase ◽  
Growth Orientation ◽  
Gaas Nanowires

scholarly journals Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram

2020 ◽  
Vol 2 (5) ◽  
pp. 2127-2134 ◽  
Author(s):  
T. Dursap ◽  
M. Vettori ◽  
A. Danescu ◽  
C. Botella ◽  
P. Regreny ◽  
...  
Keyword(s):  
Contact Angle ◽  
Crystalline Structure ◽  
Crystal Phase ◽  
Catalyst Droplet ◽  
Wetting Contact Angle ◽  
Gaas Nanowires ◽  
Phase Engineering

It is well known that the crystalline structure of the III–V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux.

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5303-5310 ◽  
Author(s):  
Pierre Corfdir ◽  
Barbara Van Hattem ◽  
Emanuele Uccelli ◽  
Sònia Conesa-Boj ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Three Dimensional ◽  
Crystal Phase ◽  
Gaas Nanowires ◽  
Quantum Disks

Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit

ACS Nano ◽  
2017 ◽  
Vol 11 (10) ◽  
pp. 10519-10528 ◽  
Author(s):  
Johan Valentin Knutsson ◽  
Sebastian Lehmann ◽  
Martin Hjort ◽  
Edvin Lundgren ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Atomic Scale ◽  
Crystal Phase ◽  
Phase Switching ◽  
Structure Changes ◽  
Scale Limit

scholarly journals Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Nano Letters ◽  
2016 ◽  
Vol 16 (4) ◽  
pp. 2181-2188 ◽  
Author(s):  
Caroline Lindberg ◽  
Alexander Whiticar ◽  
Kimberly A. Dick ◽  
Niklas Sköld ◽  
Jesper Nygård ◽  
...  
Keyword(s):  
Growth Direction ◽  
Crystal Phase ◽  
Seed Particle ◽  
Substrate Orientation ◽  
Particle Material ◽  
Gaas Nanowires

scholarly journals Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization

2016 ◽  
Vol 18 (6) ◽  
pp. 063009 ◽  
Author(s):  
Bernhard Loitsch ◽  
Marcus Müller ◽  
Julia Winnerl ◽  
Peter Veit ◽  
Daniel Rudolph ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Crystal Phase ◽  
Gaas Nanowires

scholarly journals Зависимость скорости роста и структуры III-V нитевидных нанокристаллов от площади сбора адатомов на поверхности подложки

2021 ◽  
Vol 47 (9) ◽  
pp. 37
Author(s):  
В.Г. Дубровский
Keyword(s):  
Growth Rate ◽  
Theoretical Analysis ◽  
Substrate Surface ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Crystal Phase ◽  
Wurtzite Phase ◽  
Group Iii ◽  
Gaas Nanowires ◽  
Vertical Growth Rate

A theoretical analysis is presented for the growth rate and structure of III-V nanowires depending on the collection area of group III adatoms on the substrate surface. An expression for the maximum possible nanowire vertical growth rate is obtained and different reasons are analyzed for its suppression in different technologies. It is shown that the maximum growth rate is proportional to the collection area and inversely proportional to the squared nanowire radius. It is demonstrated that self-catalyzed GaAs nanowires grow or shrink radially at large or small adatom collection areas, respectively, having the zincblende crystal phase in both cases. The wurtzite phase forms in GaAs nanowires growing only axially at the intermediate adatom collection areas.

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