Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires

2014 ◽  
Vol 15 (1) ◽  
pp. 340-347 ◽  
Author(s):  
V.G. Dubrovskii ◽  
J. Grecenkov
Keyword(s):  
Nucleation Rate ◽  
Crystal Phase ◽  
Gaas Nanowires ◽  
Self Consistency

Crystal phase and growth orientation dependence of GaAs nanowires on NixGay seeds via vapor-solid-solid mechanism

2011 ◽  
Vol 99 (8) ◽  
pp. 083114 ◽  
Author(s):  
Ning Han ◽  
Alvin T. Hui ◽  
Fengyun Wang ◽  
Jared J. Hou ◽  
Fei Xiu ◽  
...  
Keyword(s):  
Orientation Dependence ◽  
Crystal Phase ◽  
Growth Orientation ◽  
Gaas Nanowires

scholarly journals Crystallization of Supercooled Liquids: Self-Consistency Correction of the Steady-State Nucleation Rate

Entropy ◽  
2020 ◽  
Vol 22 (5) ◽  
pp. 558 ◽  
Author(s):  
Alexander S. Abyzov ◽  
Jürn W. P. Schmelzer ◽  
Vladimir M. Fokin ◽  
Edgar D. Zanotto
Keyword(s):  
Free Energy ◽  
Steady State ◽  
Size Distribution ◽  
Gibbs Free Energy ◽  
Nucleation Rate ◽  
Cluster Size ◽  
Cluster Formation ◽  
Cluster Size Distribution ◽  
Crystal Nucleation ◽  
Self Consistency

Crystal nucleation can be described by a set of kinetic equations that appropriately account for both the thermodynamic and kinetic factors governing this process. The mathematical analysis of this set of equations allows one to formulate analytical expressions for the basic characteristics of nucleation, i.e., the steady-state nucleation rate and the steady-state cluster-size distribution. These two quantities depend on the work of formation, Δ G ( n ) = − n Δ μ + γ n 2 / 3 , of crystal clusters of size n and, in particular, on the work of critical cluster formation, Δ G ( n c ) . The first term in the expression for Δ G ( n ) describes changes in the bulk contributions (expressed by the chemical potential difference, Δ μ ) to the Gibbs free energy caused by cluster formation, whereas the second one reflects surface contributions (expressed by the surface tension, σ : γ = Ω d 0 2 σ , Ω = 4 π ( 3 / 4 π ) 2 / 3 , where d 0 is a parameter describing the size of the particles in the liquid undergoing crystallization), n is the number of particles (atoms or molecules) in a crystallite, and n = n c defines the size of the critical crystallite, corresponding to the maximum (in general, a saddle point) of the Gibbs free energy, G. The work of cluster formation is commonly identified with the difference between the Gibbs free energy of a system containing a cluster with n particles and the homogeneous initial state. For the formation of a “cluster” of size n = 1 , no work is required. However, the commonly used relation for Δ G ( n ) given above leads to a finite value for n = 1 . By this reason, for a correct determination of the work of cluster formation, a self-consistency correction should be introduced employing instead of Δ G ( n ) an expression of the form Δ G ˜ ( n ) = Δ G ( n ) − Δ G ( 1 ) . Such self-consistency correction is usually omitted assuming that the inequality Δ G ( n ) ≫ Δ G ( 1 ) holds. In the present paper, we show that: (i) This inequality is frequently not fulfilled in crystal nucleation processes. (ii) The form and the results of the numerical solution of the set of kinetic equations are not affected by self-consistency corrections. However, (iii) the predictions of the analytical relations for the steady-state nucleation rate and the steady-state cluster-size distribution differ considerably in dependence of whether such correction is introduced or not. In particular, neglecting the self-consistency correction overestimates the work of critical cluster formation and leads, consequently, to far too low theoretical values for the steady-state nucleation rates. For the system studied here as a typical example (lithium disilicate, Li 2 O · 2 SiO 2 ), the resulting deviations from the correct values may reach 20 orders of magnitude. Consequently, neglecting self-consistency corrections may result in severe errors in the interpretation of experimental data if, as it is usually done, the analytical relations for the steady-state nucleation rate or the steady-state cluster-size distribution are employed for their determination.

scholarly journals Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram

2020 ◽  
Vol 2 (5) ◽  
pp. 2127-2134 ◽  
Author(s):  
T. Dursap ◽  
M. Vettori ◽  
A. Danescu ◽  
C. Botella ◽  
P. Regreny ◽  
...  
Keyword(s):  
Contact Angle ◽  
Crystalline Structure ◽  
Crystal Phase ◽  
Catalyst Droplet ◽  
Wetting Contact Angle ◽  
Gaas Nanowires ◽  
Phase Engineering

It is well known that the crystalline structure of the III–V nanowires (NWs) is mainly controlled by the wetting contact angle of the catalyst droplet which can be tuned by the III and V flux.

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Nano Letters ◽  
2013 ◽  
Vol 13 (11) ◽  
pp. 5303-5310 ◽  
Author(s):  
Pierre Corfdir ◽  
Barbara Van Hattem ◽  
Emanuele Uccelli ◽  
Sònia Conesa-Boj ◽  
Pierre Lefebvre ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Three Dimensional ◽  
Crystal Phase ◽  
Gaas Nanowires ◽  
Quantum Disks

scholarly journals Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Nano Letters ◽  
2016 ◽  
Vol 16 (4) ◽  
pp. 2181-2188 ◽  
Author(s):  
Caroline Lindberg ◽  
Alexander Whiticar ◽  
Kimberly A. Dick ◽  
Niklas Sköld ◽  
Jesper Nygård ◽  
...  
Keyword(s):  
Growth Direction ◽  
Crystal Phase ◽  
Seed Particle ◽  
Substrate Orientation ◽  
Particle Material ◽  
Gaas Nanowires

scholarly journals Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization

2016 ◽  
Vol 18 (6) ◽  
pp. 063009 ◽  
Author(s):  
Bernhard Loitsch ◽  
Marcus Müller ◽  
Julia Winnerl ◽  
Peter Veit ◽  
Daniel Rudolph ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Crystal Phase ◽  
Gaas Nanowires

Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates

2018 ◽  
Vol 122 (33) ◽  
pp. 19230-19235 ◽  
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii ◽  
Guillaume Monier ◽  
Evelyne Gil ◽  
Christine Leroux ◽  
...  
Keyword(s):  
Nucleation Rate ◽  
Silicon Substrates ◽  
Gaas Nanowires

scholarly journals Зависимость скорости роста и структуры III-V нитевидных нанокристаллов от площади сбора адатомов на поверхности подложки

2021 ◽  
Vol 47 (9) ◽  
pp. 37
Author(s):  
В.Г. Дубровский
Keyword(s):  
Growth Rate ◽  
Theoretical Analysis ◽  
Substrate Surface ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Crystal Phase ◽  
Wurtzite Phase ◽  
Group Iii ◽  
Gaas Nanowires ◽  
Vertical Growth Rate

A theoretical analysis is presented for the growth rate and structure of III-V nanowires depending on the collection area of group III adatoms on the substrate surface. An expression for the maximum possible nanowire vertical growth rate is obtained and different reasons are analyzed for its suppression in different technologies. It is shown that the maximum growth rate is proportional to the collection area and inversely proportional to the squared nanowire radius. It is demonstrated that self-catalyzed GaAs nanowires grow or shrink radially at large or small adatom collection areas, respectively, having the zincblende crystal phase in both cases. The wurtzite phase forms in GaAs nanowires growing only axially at the intermediate adatom collection areas.

scholarly journals Interface dynamics and crystal phase switching in GaAs nanowires

Nature ◽  
2016 ◽  
Vol 531 (7594) ◽  
pp. 317-322 ◽  
Author(s):  
Daniel Jacobsson ◽  
Federico Panciera ◽  
Jerry Tersoff ◽  
Mark C. Reuter ◽  
Sebastian Lehmann ◽  
...  
Keyword(s):  
Crystal Phase ◽  
Interface Dynamics ◽  
Phase Switching ◽  
Gaas Nanowires
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