scholarly journals Electronic spin transport and spin precession in single graphene layers at room temperature

Nature ◽  
2007 ◽  
Vol 448 (7153) ◽  
pp. 571-574 ◽  
Author(s):  
Nikolaos Tombros ◽  
Csaba Jozsa ◽  
Mihaita Popinciuc ◽  
Harry T. Jonkman ◽  
Bart J. van Wees
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Precession ◽  
Graphene Layers ◽  
Electronic Spin

Spin Precession and Spin‐Charge Conversion in a Strong Rashba Channel at Room Temperature

2021 ◽  
Author(s):  
Seong Been Kim ◽  
Jeehoon Jeon ◽  
Hyung-jun Kim ◽  
Joonyeon Chang ◽  
Hyun Cheol Koo
Keyword(s):  
Room Temperature ◽  
Spin Precession

scholarly journals Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Small ◽  
2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Saumil Bandyopadhyay ◽  
Md. Iftekhar Hossain ◽  
Hasnain Ahmad ◽  
Jayasimha Atulasimha ◽  
Supriyo Bandyopadhyay
Keyword(s):  
Spin Relaxation ◽  
Room Temperature ◽  
Spin Transport ◽  
Insb Nanowires ◽  
Coherent Spin

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

2014 ◽  
Vol 104 (7) ◽  
pp. 072406 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yohei Aoshima ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Spin Transport

scholarly journals Bidirectional mid-infrared communications between two identical macroscopic graphene fibres

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Bo Fang ◽  
Srikrishna Chanakya Bodepudi ◽  
Feng Tian ◽  
Xinyu Liu ◽  
Dan Chang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cryogenic Cooling ◽  
Mid Infrared ◽  
Graphene Layers ◽  
Sensing Systems ◽  
Weakly Coupled ◽  
Remote Sensing Systems ◽  
Infrared Communications ◽  
Low Performance ◽  
Set Up

AbstractAmong light-based free-space communication platforms, mid-infrared (MIR) light pertains to important applications in biomedical engineering, environmental monitoring, and remote sensing systems. Integrating MIR generation and reception in a network using two identical devices is vital for the miniaturization and simplification of MIR communications. However, conventional MIR emitters and receivers are not bidirectional due to intrinsic limitations of low performance and often require cryogenic cooling. Here, we demonstrate that macroscopic graphene fibres (GFs) assembled from weakly-coupled graphene layers allow room-temperature MIR detection and emission with megahertz modulation frequencies due to the persistence of photo-thermoelectric effect in millimeter-length and the ability to rapidly modulate gray-body radiation. Based on the dual-functionality of GFs, we set up a system that conducts bidirectional data transmission by switching modes between two identical GFs. The room-temperature operation of our systems and the potential to produce GFs on industrial textile-scale offer opportunities for simplified and wearable optical communications.

scholarly journals Electronic spin transport in graphene field-effect transistors

2009 ◽  
Vol 80 (21) ◽  
Author(s):  
M. Popinciuc ◽  
C. Józsa ◽  
P. J. Zomer ◽  
N. Tombros ◽  
A. Veligura ◽  
...  
Keyword(s):  
Field Effect ◽  
Spin Transport ◽  
Field Effect Transistors ◽  
Electronic Spin
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