Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

2014 ◽  
Vol 104 (7) ◽  
pp. 072406 ◽  
Author(s):  
Nobuhide Yokota ◽  
Yohei Aoshima ◽  
Kazuhiro Ikeda ◽  
Hitoshi Kawaguchi
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Spin Transport

Low threshold, room temperature pulsed and quasi-continuous lasing in optically pumped CdZnTe/ZnTe quantum wells

1993 ◽  
Vol 22 (5) ◽  
pp. 479-484 ◽  
Author(s):  
R. D. Feldman ◽  
T. D. Harris ◽  
J. E. Zucker ◽  
D. Lee ◽  
R. F. Austin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optically Pumped ◽  
Low Threshold

Coherent spin transport by acoustic fields in GaAs quantum wells

2006 ◽  
Vol 3 (12) ◽  
pp. 4307-4312 ◽  
Author(s):  
O. D. D. Couto ◽  
F. Iikawa ◽  
J. A. H. Stotz ◽  
R. Hey ◽  
P. V. Santos
Keyword(s):  
Quantum Wells ◽  
Spin Transport ◽  
Acoustic Fields ◽  
Coherent Spin

scholarly journals Coherent Spin Transport and Suppression of Spin Relaxation in InSb Nanowires with Single Subband Occupancy at Room Temperature

Small ◽  
2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Saumil Bandyopadhyay ◽  
Md. Iftekhar Hossain ◽  
Hasnain Ahmad ◽  
Jayasimha Atulasimha ◽  
Supriyo Bandyopadhyay
Keyword(s):  
Spin Relaxation ◽  
Room Temperature ◽  
Spin Transport ◽  
Insb Nanowires ◽  
Coherent Spin

scholarly journals Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

1999 ◽  
Vol 74 (22) ◽  
pp. 3359-3361 ◽  
Author(s):  
C. Jordan ◽  
J. F. Donegan ◽  
J. Hegarty ◽  
B. J. Roycroft ◽  
S. Taniguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Density Dependence ◽  
Carrier Density ◽  
Room Temperature

Anisotropic Spin Transport in (110) GaAs Quantum Wells

2007 ◽  
Vol 98 (3) ◽  
Author(s):  
O. D. D. Couto ◽  
F. Iikawa ◽  
J. Rudolph ◽  
R. Hey ◽  
P. V. Santos
Keyword(s):  
Quantum Wells ◽  
Spin Transport

Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room temperature

2013 ◽  
Vol 102 (20) ◽  
pp. 202408 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Room Temperature ◽  
Anomalous Hall Effect

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

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