scholarly journals Fabrication of vertically aligned single-crystalline lanthanum hexaboride nanowire arrays and investigation of their field emission

2013 ◽  
Vol 5 (7) ◽  
pp. e53-e53 ◽  
Author(s):  
Junqi Xu ◽  
Guanghua Hou ◽  
Huiqiao Li ◽  
Tianyou Zhai ◽  
Baoping Dong ◽  
...  
2008 ◽  
Vol 20 (13) ◽  
pp. 2609-2615 ◽  
Author(s):  
Fei Liu ◽  
Jifa Tian ◽  
Lihong Bao ◽  
Tianzhong Yang ◽  
Chenming Shen ◽  
...  

2014 ◽  
Vol 556 ◽  
pp. 146-154 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Looi Choon Beng ◽  
Hsuan-Chen Chang ◽  
Yung-Jui Huang ◽  
...  

ChemInform ◽  
2006 ◽  
Vol 37 (13) ◽  
Author(s):  
Qing Wan ◽  
Ming Wei ◽  
Dan Zhi ◽  
Judith L. MacManus-Driscoll ◽  
Mark G. Blamire

NANO ◽  
2018 ◽  
Vol 13 (09) ◽  
pp. 1850108 ◽  
Author(s):  
Z. Feng ◽  
K. Q. Lin ◽  
Y. C. Chen ◽  
S. L. Cheng

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.


2011 ◽  
Vol 26 (9) ◽  
pp. 1091-1099 ◽  
Author(s):  
Ana Cuevas ◽  
Enrique Ariel Dalchiele ◽  
Ricardo Marotti ◽  
Dietmar Leinen ◽  
José Ramón Ramos-Barrado ◽  
...  

Abstract


2006 ◽  
Vol 18 (2) ◽  
pp. 234-238 ◽  
Author(s):  
Q. Wan ◽  
M. Wei ◽  
D. Zhi ◽  
J. L. MacManus-Driscoll ◽  
M. G. Blamire

2014 ◽  
Vol 2 (39) ◽  
pp. 8252-8258 ◽  
Author(s):  
Guohua Li ◽  
Yang Jiang ◽  
Yugang Zhang ◽  
Xinzheng Lan ◽  
Tianyou Zhai ◽  
...  

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