Are classical weak-link models adequate to explain the current–voltage characteristics in bulk YBa2Cu3O7?

Nature ◽  
1989 ◽  
Vol 341 (6244) ◽  
pp. 725-727 ◽  
Author(s):  
S. S. Bungre ◽  
R. Meisels ◽  
Z. X. Shen ◽  
A. D. Caplin
Keyword(s):  
Weak Link ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current-voltage characteristics of a four-terminal superconducting weak link

1984 ◽  
Vol 54 (5-6) ◽  
pp. 519-533 ◽  
Author(s):  
Bao-Yi Shi ◽  
Lide Zhang ◽  
Yuan-Dong Dai ◽  
Y. H. Kao
Keyword(s):  
Weak Link ◽  
Current Voltage ◽  
Current Voltage Characteristics

A study of evaporated superconducting weak-link junctions

1970 ◽  
Vol 48 (4) ◽  
pp. 470-476 ◽  
Author(s):  
O. Iwanyshyn ◽  
J. D. Leslie ◽  
H. J. T. Smith
Keyword(s):  
Josephson Junction ◽  
Liquid Helium ◽  
Weak Link ◽  
Simple Theory ◽  
Model Based ◽  
Current Voltage ◽  
Current Variation ◽  
Current Voltage Characteristics ◽  
Zero Voltage

The current–voltage characteristics and voltage oscillations of evaporated, superconducting weak-link junctions have been investigated. The zero-voltage current variation with temperature is shown to be similar to that for a Josephson junction. A simple theory based on part of the superconductor switching normal enables us to explain the voltage snapback. A model based on thermal instabilities due to bubbles in the liquid helium in contact with the junction has been used to explain the voltage oscillations.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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