Material Processing with Glow Discharge Beams

Nature ◽  
1968 ◽  
Vol 220 (5173) ◽  
pp. 1179-1182 ◽  
Author(s):  
R. A. DUGDALE
1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
E. A. Ramsay ◽  
R. S. Crandall ◽  
S. J. Salomon ◽  
...  

ABSTRACTWe have studied methods of improving glow-discharge-deposited a-Si1−x Gex :H alloys deposited using silane and germane gas mixtures. Material processing methods studied include (1) varying the substrate temperature from 170° to 280°C, (2) varying the process gas composition and pressure, (3) dilution of the feed gas by hydrogen, argon, or helium, (4) enhancing etching during deposition by adding small amounts of XeF2 vapor into the process gas, and (5) postdeposition annealing and/or hydrogenation.


1972 ◽  
Vol 23 (11) ◽  
pp. 679-679
Author(s):  
K J H Mackay

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-357-Pr3-362 ◽  
Author(s):  
D. D. Papakonstantinou ◽  
D. Mataras ◽  
Arefi-Khonsari

1982 ◽  
Vol 43 (6) ◽  
pp. 875-881 ◽  
Author(s):  
B. Dubreuil ◽  
P. Pignolet ◽  
A. Catherinot ◽  
P. Davy

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1025-C4-1028 ◽  
Author(s):  
R. Carius ◽  
R. Fischer ◽  
E. Holzenkämpfer
Keyword(s):  

2010 ◽  
Vol 130 (11) ◽  
pp. 1004-1008
Author(s):  
Shinobu Hayashi ◽  
Kohki Satoh ◽  
Hidenori Itoh

2011 ◽  
Vol 131 (9) ◽  
pp. 757-763
Author(s):  
Yasuhiro Itoh ◽  
Takamasa Oshita ◽  
Kohki Satoh ◽  
Hidenori Itoh

2003 ◽  
Vol 79 (10) ◽  
pp. 1002-1008 ◽  
Author(s):  
Koichi TAKAKI ◽  
Tamiya FUJIWARA ◽  
Fumiyoshi TOCHIKUBO

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