scholarly journals Residual Strain Mechanism of Aftershocks and Exponents of the Modified Omori's Law

2019 ◽  
Vol 124 (1) ◽  
pp. 175-194 ◽  
Author(s):  
A. V. Dyskin ◽  
E. Pasternak
Keyword(s):  
Residual Strain ◽  
Omori’S Law ◽  
Strain Mechanism

Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 340-344 ◽  
Author(s):  
P. Dobrosz ◽  
S. J. Bull ◽  
S. H. Olsen ◽  
A. G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Strained Si

scholarly journals Effect of Nanopores on Mechanical Properties of the Shape Memory Alloy

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 529
Author(s):  
Chunzhi Du ◽  
Zhifan Li ◽  
Bingfei Liu
Keyword(s):  
Mechanical Properties ◽  
Constitutive Model ◽  
Shape Memory ◽  
Young’S Modulus ◽  
Residual Strain ◽  
Surface Effect ◽  
Young's Modulus ◽  
Strain Curve ◽  
Stress Strain ◽  
Strength Limit

Nanoporous Shape Memory Alloys (SMA) are widely used in aerospace, military industry, medical and health and other fields. More and more attention has been paid to its mechanical properties. In particular, when the size of the pores is reduced to the nanometer level, the effect of the surface effect of the nanoporous material on the mechanical properties of the SMA will increase sharply, and the residual strain of the SMA material will change with the nanoporosity. In this work, the expression of Young’s modulus of nanopore SMA considering surface effects is first derived, which is a function of nanoporosity and nanopore size. Based on the obtained Young’s modulus, a constitutive model of nanoporous SMA considering residual strain is established. Then, the stress–strain curve of dense SMA based on the new constitutive model is drawn by numerical method. The results are in good agreement with the simulation results in the published literature. Finally, the stress-strain curves of SMA with different nanoporosities are drawn, and it is concluded that the Young’s modulus and strength limit decrease with the increase of nanoporosity.

Residual strain in deuterated Ti thin films

1998 ◽  
Vol 36 (1-4) ◽  
pp. 1-6 ◽  
Author(s):  
P Scardi ◽  
M Leoni ◽  
R Checchetto
Keyword(s):  
Thin Films ◽  
Residual Strain

Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

2001 ◽  
Vol 33 (1-4) ◽  
pp. 59-69 ◽  
Author(s):  
Keisuke Saito ◽  
Katsuyuki Ishikawa ◽  
Atsushi Saiki ◽  
Isao Yamaji ◽  
Takao Akai ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain ◽  
Strain Analysis

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Raman Spectroscopic Study Of Residual Strain In (1-101) GaN And (0001) GaN Layers Grown On Si Substrate

2011 ◽  
Author(s):  
Toko Sugiura ◽  
Eun-Hee Kim ◽  
Yoshio Honda ◽  
Hiroyuki Takagi ◽  
Takehiko Tsukamoto ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Residual Strain ◽  
Si Substrate ◽  
Raman Spectroscopic ◽  
Raman Spectroscopic Study
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