Sensitivity of model assessments of high-speed civil transport effects on stratospheric ozone resulting from uncertainties in the NOxproduction from lightning

1999 ◽  
Vol 104 (D21) ◽  
pp. 26401-26417 ◽  
Author(s):  
Sergei P. Smyshlyaev ◽  
Marvin A. Geller ◽  
Valery A. Yudin
Keyword(s):  
High Speed ◽  
Stratospheric Ozone ◽  
Transport Effects

Long wavelength high-speed semiconductor lasers with carrier transport effects

1992 ◽  
Vol 28 (10) ◽  
pp. 2230-2241 ◽  
Author(s):  
M. Ishikawa ◽  
R. Nagarajan ◽  
T. Fukushima ◽  
J.G. Wasserbauer ◽  
J.E. Bowers
Keyword(s):  
Semiconductor Lasers ◽  
High Speed ◽  
Carrier Transport ◽  
Long Wavelength ◽  
Transport Effects

Carrier transport effects in high-speed quantum-well lasers

1992 ◽  
Author(s):  
Radhakrishnan Nagarajan ◽  
Masayuki Ishikawa ◽  
Toru Fukushima ◽  
Randall S. Geels ◽  
John E. Bowers
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Carrier Transport ◽  
Quantum Well Lasers ◽  
Transport Effects

Effects on stratospheric ozone from high-speed civil transport: Sensitivity to stratospheric aerosol loading

1993 ◽  
Vol 98 (D12) ◽  
pp. 23133 ◽  
Author(s):  
Debra K. Weisenstein ◽  
Malcolm K. W. Ko ◽  
Jose M. Rodriguez ◽  
Nien-Dak Sze
Keyword(s):  
High Speed ◽  
Stratospheric Ozone ◽  
Stratospheric Aerosol ◽  
Aerosol Loading

High speed quantum-well lasers and carrier transport effects

1992 ◽  
Vol 28 (10) ◽  
pp. 1990-2008 ◽  
Author(s):  
R. Nagarajan ◽  
M. Ishikawa ◽  
T. Fukushima ◽  
R.S. Geels ◽  
J.E. Bowers
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Carrier Transport ◽  
Quantum Well Lasers ◽  
Transport Effects

Impact on ozone of high-speed stratospheric aircraft: effects of the emission scenario

1994 ◽  
Vol 12 (10/11) ◽  
pp. 996-1005 ◽  
Author(s):  
G. Pitari ◽  
S. Palermi ◽  
G. Visconti
Keyword(s):  
High Speed ◽  
Stratospheric Ozone ◽  
Aerosol Layer ◽  
Relative Role ◽  
Nitric Oxides ◽  
Emissions Scenarios ◽  
Odd Nitrogen ◽  
The Impact ◽  
Emission Index

Abstract. A photochemical-transport two-dimensional model has been used to assess the impact of a projected fleet of high-speed stratospheric aircraft using different emissions scenarios. It is shown that the presence in the background atmosphere of nitric acid trihydrate aerosols is responsible for a lower stratospheric denoxification in addition to that caused by the sulfate aerosol layer. This has the effect of further decreasing the relative role of the odd nitrogen catalytic cycle for ozone destruction, so that the lower stratosphere is primarily controlled by chlorine species. The effect of aircraft injection of nitric oxides is that of decreasing the level of ClO, so that the lower stratospheric ozone (below about 20-25 km altitude) increases. The net effect on global ozone is that of a small increase even at Mach 2.4, and is enhanced by adopting emission scenarios including altitude restriction at 15 or 18 km. Reductions of the emission index (EI) of nitric oxides below relatively small values (about 15) are shown to reduce the aircraft-induced ozone increase, because of the associated smaller decrease of ClO. This conclusion is no more valid when the emission index is raised at the present values (about 45).

scholarly journals Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching

1982 ◽  
Vol 35 (6) ◽  
pp. 749
Author(s):  
PH Ladbrooke ◽  
DR Debuf ◽  
K Nanayakkara ◽  
DR Wilkins
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Electrical Behaviour ◽  
Technological Factors ◽  
Ballistic Electron ◽  
Ballistic Electron Transport ◽  
Field Effect Devices ◽  
Transport Effects

A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

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