scholarly journals Hydrogen Incorporation in Natural Mantle Olivines

2013 ◽  
pp. 45-56 ◽  
Author(s):  
Jed L. Mosenfelder ◽  
Thomas G. Sharp ◽  
Paul D. Asimow ◽  
George R. Rossman
Keyword(s):  
Hydrogen Incorporation

Hydrogen incorporation in CNx films deposited by ECR chemical vapor deposition

2003 ◽  
Vol 12 (3-7) ◽  
pp. 632-635 ◽  
Author(s):  
M. Camero ◽  
R. Gago ◽  
C. Gómez-Aleixandre ◽  
J.M. Albella
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Cnx Films

Coupled boron and hydrogen incorporation in coesite

2009 ◽  
Vol 21 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Fiorenza Deon ◽  
Monika Hövelmann Koch-Müller ◽  
Sylvia-Monique Thomas
Keyword(s):  
Hydrogen Incorporation

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

Decrease of hydrogen incorporation in forsterite from CO2-H2O-rich kimberlitic liquid

2015 ◽  
Vol 100 (8-9) ◽  
pp. 1912-1920 ◽  
Author(s):  
Virginie Baptiste ◽  
Sylvie Demouchy ◽  
Shantanu Keshav ◽  
Fleurice Parat ◽  
Nathalie Bolfan-Casanova ◽  
...  
Keyword(s):  
Hydrogen Incorporation

Oxygen Diffusion Phenomena and Hydrogen Incorporation in Reducing BaTiO$_{3}$ Ceramics Doped with Ho below Solubility Limit

2012 ◽  
Vol 51 ◽  
pp. 101801 ◽  
Author(s):  
Isao Sakaguchi ◽  
Ken Watanabe ◽  
Shunichi Hishita ◽  
Naoki Ohashi ◽  
Hajime Haneda
Keyword(s):  
Oxygen Diffusion ◽  
Solubility Limit ◽  
Hydrogen Incorporation ◽  
Diffusion Phenomena

Bias Annealing Effect on Hydrogen-Containing Au/N-Silicon Schottky Barrier

1993 ◽  
Vol 319 ◽  
Author(s):  
M.H. Yuan ◽  
Y.Q. Jia ◽  
G.G. Qin
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Annealing Temperature ◽  
Interface States ◽  
Annealing Effect ◽  
Reversible Change ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Hydrogen Incorporation

AbstractAu/n-Si Schottky barrier (SB) incorporated by hydrogen has a 0.13 eV lower SB height (SBH) than that without hydrogen incorporation. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. Besides, the ZBA and RBA cycling experiments reveal a reversible change of the SBH with in at least three cycles. The higher annealing temperature of RBA results in higher SBH. We interpret the above experimental facts as that hydrogen has an effect on metal-semiconductor interface states and then on the SBH, and both the bias on SB and temperature of annealing can influence the hydrogen effects on metal-semiconductor interface states.

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