High-cycle fatigue of micron-scale polycrystalline silicon films: fracture mechanics analyses of the role of the silica/silicon interface

2003 ◽  
Vol 119/120 (4-2) ◽  
pp. 449-474 ◽  
Author(s):  
C.L. Muhlstein ◽  
R.O. Ritchie
Keyword(s):  
Fracture Mechanics ◽  
Polycrystalline Silicon ◽  
High Cycle Fatigue ◽  
Silicon Films ◽  
Cycle Fatigue ◽  
Polycrystalline Silicon Films ◽  
Silicon Interface

Role of impurities in zone melting recrystallization of 10 μm thick polycrystalline silicon films

1988 ◽  
Vol 63 (8) ◽  
pp. 2660-2668 ◽  
Author(s):  
P. W. Mertens ◽  
D. J. Wouters ◽  
H. E. Maes ◽  
A. De Veirman ◽  
J. Van Landuyt
Keyword(s):  
Polycrystalline Silicon ◽  
Zone Melting ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

The role of hydrogen in the deposition, composition, and structure of semi‐insulating polycrystalline silicon films

1985 ◽  
Vol 57 (8) ◽  
pp. 2766-2770 ◽  
Author(s):  
B. Verstegen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
J. Holsbrink ◽  
J. Snijder
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Composition And Structure ◽  
Polycrystalline Silicon Films

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

1986 ◽  
Vol 98 (2) ◽  
pp. 383-390 ◽  
Author(s):  
F. L. Edelman ◽  
J. Heydenreich ◽  
D. Hoehl ◽  
J. Matthäi ◽  
I. Melnik ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Stresses in thin polycrystalline silicon films

1988 ◽  
Vol 162 ◽  
pp. 365-374 ◽  
Author(s):  
V.M. Koleshko ◽  
V.F. Belitsky ◽  
I.V. Kiryushin
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films
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