scholarly journals Integrated Microspectrometer with Elliptical Bragg Mirror Enhanced Diffraction Grating on Silicon on Insulator

ACS Photonics ◽  
2014 ◽  
Vol 1 (5) ◽  
pp. 430-436 ◽  
Author(s):  
Pierre Pottier ◽  
Michael J. Strain ◽  
Muthukumaran Packirisamy
Keyword(s):  
Diffraction Grating ◽  
Silicon On Insulator ◽  
Bragg Mirror

scholarly journals Synthesis of Planar Reflective Gratings for Silicon Interconnects

2008 ◽  
Vol 2008 ◽  
pp. 1-8
Author(s):  
Ronald Millett ◽  
Jamie Ramsey ◽  
Przemek Bock ◽  
Julie Nkanta ◽  
Henry Schriemer ◽  
...  
Keyword(s):  
Diffraction Grating ◽  
Free Spectral Range ◽  
Silicon On Insulator ◽  
Dispersion Property ◽  
Wavelength Division ◽  
Optical Crosstalk ◽  
Minimal Thickness ◽  
Planar Silicon ◽  
Polarization Insensitive ◽  
Integrated Receiver

The design and simulations of planar reflective gratings for building optical interconnects in silicon-on-insulator (SOI) were studied for a range of silicon core thicknesses of 0.1 to 10 μm. The verticality of the grating facets has been shown to be the main contributing factor to the cumulative crosstalk in thick silicon cores. The dispersion property of the slab was found to limit the minimal thickness of the core for polarization-insensitive gratings. The effects of polarization-dependent confinement on optical crosstalk were studied. The findings were used to design and simulate a polarization-insensitive 18-channel coarse wavelength division demultiplexer (CWDM) with a free spectral range of over 600 nm. The CWDM demultiplexer uses a 1.7 μm silicon core and combines a shallow-etch tapered rib structure and multimode silicon channels to produce box-like passbands for integrated receiver applications. The diffraction grating was constructed using double astigmatic point design with phase-corrected grating facets to reduce astigmatism. Optical properties of the planar gratings have been simulated using quasivectorial diffraction grating theory. The simulation results confirm that there is high diffraction efficiency and low optical crosstalk over the entire range of operation. Applications of planar silicon gratings to the synthesis of silicon interconnects are discussed.

scholarly journals CALCULATION OF THE REFLECTION SPECTRA OF Ge-Sb-Te DIFFRACTION GRATING USING THE TAUC–LORENTZ DISPERSION MODEL

2020 ◽  
Author(s):  
Ramil Minnullin ◽  
Dmitriy Korolev ◽  
Aleksandr Sapegin ◽  
Mikhail Barabanenkov
Keyword(s):  
Riccati Equation ◽  
Diffraction Grating ◽  
Near Infrared ◽  
Dispersion Model ◽  
Silicon On Insulator ◽  
Equation Method ◽  
Infrared Range ◽  
Reflection Spectra ◽  
Matrix Riccati Equation ◽  
Near Infrared Range

In this paper reflection spectra in the near infrared range are calculated for the diffraction grating of Ge-Sb-Te alloy on a silicon-on-insulator waveguide with use of Tauc–Lorentz dispersion model and Matrix Riccati Equation method.

Silicon-on-Insulator-Based Compact Optical Demultiplexer Employing Etched Diffraction Grating

2004 ◽  
Vol 21 (7) ◽  
pp. 1265-1267 ◽  
Author(s):  
Wang Wen-Hui ◽  
Tang Yan-Zhe ◽  
Wang Yun-Xiang ◽  
Qu Hong-Chang ◽  
Wu Ya-Ming ◽  
...  
Keyword(s):  
Diffraction Grating ◽  
Silicon On Insulator ◽  
Etched Diffraction Grating

An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

2013 ◽  
Vol 30 (8) ◽  
pp. 084204 ◽  
Author(s):  
Ao Shen ◽  
Chen Qiu ◽  
Ting Hu ◽  
Chao Xu ◽  
Xiao-Qing Jiang ◽  
...  
Keyword(s):  
Diffraction Grating ◽  
Silicon On Insulator ◽  
Etched Diffraction Grating

Etched-Diffraction-Grating-Based Planar Waveguide Demultiplexer on Silicon-on-Insulator

2004 ◽  
Vol 36 (6) ◽  
pp. 559-566 ◽  
Author(s):  
Wenhui Wang ◽  
Yanzhe Tang ◽  
Yunxiang Wang ◽  
Hongchang Qu ◽  
Yaming Wu ◽  
...  
Keyword(s):  
Diffraction Grating ◽  
Planar Waveguide ◽  
Silicon On Insulator ◽  
Etched Diffraction Grating

scholarly journals REFLECTION SPECTRA OF GE-SB-TE DIFFRACTION GRATING ON A SILICON-ON-INSULATOR WAVEGUIDE

2020 ◽  
Author(s):  
Ramil Minnullin ◽  
Mikhail Barabanenkov
Keyword(s):  
Riccati Equation ◽  
Energy Budget ◽  
Diffraction Grating ◽  
Memory Cell ◽  
Resonant Mode ◽  
Silicon On Insulator ◽  
Reflection Spectra ◽  
The Matrix ◽  
Non Volatile Memory ◽  
Potential Component

In this work a diffraction grating made of a phasechange material (GeSbTe) and placed on a silicon-on-insulator waveguide is considered as a potential component of the optical non-volatile memory cell. Reflection spectra of such waveguidegrating structures are calculated with use of the Matrix Riccati Equation technique. Parameters corresponding to the excitation of a resonant mode inside the grating, which can help decreasing the energy budget for switching the GeSbTe phase, are determined.

Uniformity of Magnification from Different Electron Microscopes

1967 ◽  
Vol 25 ◽  
pp. 32-33
Author(s):  
Godfrey C. Hoskins ◽  
V. Williams ◽  
V. Allison
Keyword(s):  
Diffraction Grating ◽  
The Other ◽  
Carbon Replica ◽  
Electron Microscopes ◽  
The Stability

The method demonstrated is an adaptation of a proven procedure for accurately determining the magnification of light photomicrographs. Because of the stability of modern electrical lenses, the method is shown to be directly applicable for providing precise reproducibility of magnification in various models of electron microscopes.A readily recognizable area of a carbon replica of a crossed-line diffraction grating is used as a standard. The same area of the standard was photographed in Phillips EM 200, Hitachi HU-11B2, and RCA EMU 3F electron microscopes at taps representative of the range of magnification of each. Negatives from one microscope were selected as guides and printed at convenient magnifications; then negatives from each of the other microscopes were projected to register with these prints. By deferring measurement to the print rather than comparing negatives, correspondence of magnification of the specimen in the three microscopes could be brought to within 2%.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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