scholarly journals Reaction of Methylcyclopentadienyl Manganese Tricarbonyl on Silicon Oxide Surfaces: Implications for Thin Film Atomic Layer Depositions

2014 ◽  
Vol 33 (19) ◽  
pp. 5308-5315 ◽  
Author(s):  
Menno Bouman ◽  
Xiangdong Qin ◽  
Vananh Doan ◽  
Benjamin L. D. Groven ◽  
Francisco Zaera
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Oxide Surfaces ◽  
Methylcyclopentadienyl Manganese Tricarbonyl ◽  
Manganese Tricarbonyl

scholarly journals Atomic Layer Deposition of Lithium–Nickel–Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries

Energies ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2345
Author(s):  
Maxim Maximov ◽  
Denis Nazarov ◽  
Aleksander Rumyantsev ◽  
Yury Koshtyal ◽  
Ilya Ezhov ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Atomic Layer Deposition ◽  
Lithium Ion Batteries ◽  
Silicon Oxide ◽  
Lithium Ion ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition ◽  
Nickel Silicon

Lithium nickelate (LiNiO2) and materials based on it are attractive positive electrode materials for lithium-ion batteries, owing to their large capacity. In this paper, the results of atomic layer deposition (ALD) of lithium–nickel–silicon oxide thin films using lithium hexamethyldisilazide (LiHMDS) and bis(cyclopentadienyl) nickel (II) (NiCp2) as precursors and remote oxygen plasma as a counter-reagent are reported. Two approaches were studied: ALD using supercycles and ALD of the multilayered structure of lithium oxide, lithium nickel oxide, and nickel oxides followed by annealing. The prepared films were studied by scanning electron microscopy, spectral ellipsometry, X-ray diffraction, X-ray reflectivity, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction. The pulse ratio of LiHMDS/Ni(Cp)2 precursors in one supercycle ranged from 1/1 to 1/10. Silicon was observed in the deposited films, and after annealing, crystalline Li2SiO3 and Li2Si2O5 were formed at 800 °C. Annealing of the multilayered sample caused the partial formation of LiNiO2. The obtained cathode materials possessed electrochemical activity comparable with the results for other thin-film cathodes.

Characteristics of Silicon Oxide Thin Film Deposited via Remote Plasma Atomic Layer Deposition

2021 ◽  
Vol 10 (4) ◽  
pp. 043005
Author(s):  
Chanwon Jung ◽  
Seokhwi Song ◽  
Namgue Lee ◽  
Youngjoon Kim ◽  
Eun Jong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Remote Plasma ◽  
Layer Deposition

Charge motion on silicon oxide surfaces

1967 ◽  
Vol 6 (4) ◽  
pp. 440-460 ◽  
Author(s):  
P. Ho ◽  
K. Lehovec ◽  
L. Fedotowsky
Keyword(s):  
Silicon Oxide ◽  
Oxide Surfaces ◽  
Charge Motion
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