Kinetics of Adsorption of Methylcyclopentadienyl Manganese Tricarbonyl on Copper Surfaces and Implications for the Atomic Layer Deposition of Thin Solid Films

2016 ◽  
Vol 120 (15) ◽  
pp. 8232-8239 ◽  
Author(s):  
Menno Bouman ◽  
Francisco Zaera
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Thin Solid Films ◽  
Kinetics Of Adsorption ◽  
Copper Surfaces ◽  
Solid Films ◽  
Layer Deposition ◽  
Methylcyclopentadienyl Manganese Tricarbonyl ◽  
Manganese Tricarbonyl ◽  
Kinetics Of

scholarly journals Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

2018 ◽  
Vol 9 ◽  
pp. 119-128 ◽  
Author(s):  
Kristjan Kalam ◽  
Helina Seemen ◽  
Peeter Ritslaid ◽  
Mihkel Rähn ◽  
Aile Tamm ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Thin Solid Films ◽  
Solid Films ◽  
Electrical And Magnetic Properties ◽  
Layer Deposition ◽  
Composition And Structure ◽  
A Charge

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0.

Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68515-68524 ◽  
Author(s):  
Luchana L. Yusup ◽  
Jae-Min Park ◽  
Yong-Ho Noh ◽  
Sun-Jae Kim ◽  
Won-Jun Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Sites ◽  
Thermodynamics And Kinetics ◽  
Layer Deposition ◽  
Kinetics Of

The reactivity of surface sites plays a very important role to determine the thermodynamics and kinetics of ALD processes.

Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition

2001 ◽  
Vol 479 (1-3) ◽  
pp. 121-135 ◽  
Author(s):  
J.W Elam ◽  
C.E Nelson ◽  
R.K Grubbs ◽  
S.M George
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Kinetics Of
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