Activation of Water and of Dioxygen by a Bis(diphenylphosphinopropyl)silyl (biPSi) Complex of Ruthenium(II):  Formation of Bis(diphenylphosphinopropyl)siloxo Cage Complexes. Concomitant Oxygen Atom Insertion into a Silicon−Carbon Bond

2001 ◽  
Vol 20 (23) ◽  
pp. 4766-4768 ◽  
Author(s):  
Stephen R. Stobart ◽  
Xiaobing (Joe) Zhou ◽  
Raymundo Cea-Olivares ◽  
Alfredo Toscano
Keyword(s):  
Oxygen Atom ◽  
Carbon Bond ◽  
Silicon Carbon ◽  
Oxygen Atom Insertion

Oxygen Atom Insertion into the Osmium–Carbon Bond via an Organometallic Oxido–Osmium(V) Intermediate

2021 ◽  
Vol 40 (2) ◽  
pp. 102-106
Author(s):  
Hideki Sugimoto ◽  
Kurumi Aoki ◽  
Mayuko Miyanishi ◽  
Yoshihito Shiota ◽  
Kazunari Yoshizawa ◽  
...  
Keyword(s):  
Oxygen Atom ◽  
Carbon Bond ◽  
Oxygen Atom Insertion

Exploring Oxidation of Half-Sandwich Rhodium Complexes: Oxygen Atom Insertion into the Rhodium–Carbon Bond of κ2-Coordinated 2-Phenylpyridine

2014 ◽  
Vol 33 (17) ◽  
pp. 4442-4448 ◽  
Author(s):  
Christopher R. Turlington ◽  
James Morris ◽  
Peter S. White ◽  
William W. Brennessel ◽  
William D. Jones ◽  
...  
Keyword(s):  
Oxygen Atom ◽  
Rhodium Complexes ◽  
Carbon Bond ◽  
Half Sandwich ◽  
Oxygen Atom Insertion

scholarly journals Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene

2014 ◽  
Vol 113 (11) ◽  
Author(s):  
Toma Susi ◽  
Jani Kotakoski ◽  
Demie Kepaptsoglou ◽  
Clemens Mangler ◽  
Tracy C. Lovejoy ◽  
...  
Keyword(s):  
Carbon Bond ◽  
Silicon Carbon

Electrophilic Cleavage of One Silicon–Carbon Bond of Pentacoordinate Tetraorganosilanes: Synthesis of Silalactones

2004 ◽  
Vol 116 (1) ◽  
pp. 106-108 ◽  
Author(s):  
Mitsuru Shindo ◽  
Kenji Matsumoto ◽  
Kozo Shishido
Keyword(s):  
Carbon Bond ◽  
Silicon Carbon

scholarly journals Selective Oxygen Atom Insertion into an Aryl–Palladium Bond

2016 ◽  
Vol 35 (16) ◽  
pp. 2645-2654 ◽  
Author(s):  
Ava Behnia ◽  
Paul D. Boyle ◽  
Johanna M. Blacquiere ◽  
Richard J. Puddephatt
Keyword(s):  
Oxygen Atom ◽  
Oxygen Atom Insertion

Kinetics of Plasmon-Driven Hydrosilylation of Silicon Surfaces: Photogenerated Charges Drive Silicon- Carbon Bond Formation

2021 ◽  
Author(s):  
Chengcheng Rao ◽  
Brian Olsen ◽  
Erik Luber ◽  
Jillian Buriak
Keyword(s):  
Green Light ◽  
Kinetic Studies ◽  
Silicon Surfaces ◽  
Moderate Intensity ◽  
Carbon Bond ◽  
Silicon Carbon ◽  
Set Up ◽  
Kinetics Of ◽  
Insight Into

Optically transparent PDMS stamps coated with a layer of gold nanoparticles were employed as plasmonic stamps to drive surface chemistry on silicon surfaces. Illumination of a sandwich of plasmonic stamps, an alkene ink, and hydride-terminated silicon with green light of moderate intensity drives hydrosilylation on the surface. The key to the mechanism of the hydrosilylation is the presence of holes at the Si-H-terminated interface, which is followed by attack by a proximal alkene and formation of the silicon-carbon bond. In this work, detailed kinetic studies of the hydrosilylation on silicon with different doping levels, n++, p++, n, p, and intrinsic were carried out to provide further insight into the role of the metal-insulator-semiconductor (MIS) junction that is set up during the stamping.

scholarly journals Facile Oxygen Atom Insertion into Unactivated C(sp3)–C(sp2) Single Bonds in Reactions of Iridium(III) Complexes with O2

2013 ◽  
Vol 32 (2) ◽  
pp. 714-717 ◽  
Author(s):  
Crispín Cristóbal ◽  
Eleuterio Álvarez ◽  
Margarita Paneque ◽  
Manuel L. Poveda
Keyword(s):  
Oxygen Atom ◽  
Single Bonds ◽  
Oxygen Atom Insertion
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