Improved transparency-efficiency trade-off in a new class of nonlinear organosilicon compounds

1991 ◽  
Vol 10 (10) ◽  
pp. 3660-3668 ◽  
Author(s):  
G. Mignani ◽  
M. Barzoukas ◽  
J. Zyss ◽  
G. Soula ◽  
F. Balegroune ◽  
...  
Keyword(s):  
Organosilicon Compounds ◽  
Trade Off ◽  
New Class

ChemInform Abstract: Improved Transparency-Efficiency Trade-Off in a New Class of Nonlinear Organosilicon Compounds.

ChemInform ◽  
2010 ◽  
Vol 23 (5) ◽  
pp. no-no
Author(s):  
G. MIGNANI ◽  
M. BARZOUKAS ◽  
J. ZYSS ◽  
G. SOULA ◽  
F. BALEGROUNE ◽  
...  
Keyword(s):  
Organosilicon Compounds ◽  
Trade Off ◽  
New Class

Evading the strength–ductility trade-off dilemma of rigid thermosets by incorporating triple cross-links of varying strengths

2020 ◽  
Vol 11 (39) ◽  
pp. 6281-6287
Author(s):  
Cheng Wang ◽  
Shuai Zhang ◽  
Longfei Zhang ◽  
Yewei Xu ◽  
Lin Zhang
Keyword(s):  
Trade Off ◽  
New Class ◽  
Cross Links

A new class of rigid thermosets with simultaneously enhanced strengths and ductilities have been successfully designed and synthesised.

ChemInform Abstract: Pericyclynosilanes: Synthesis of a New Class of Cyclic Organosilicon Compounds.

ChemInform ◽  
1989 ◽  
Vol 20 (3) ◽  
Author(s):  
R. BORTOLIN ◽  
B. PARBHOO ◽  
S. S. D. BROWN
Keyword(s):  
Organosilicon Compounds ◽  
New Class

scholarly journals Donor–acceptor organo-imido polyoxometalates: high transparency, high activity redox-active NLO chromophores

2016 ◽  
Vol 45 (7) ◽  
pp. 2818-2822 ◽  
Author(s):  
Ahmed Al-Yasari ◽  
Nick Van Steerteghem ◽  
Hani El Moll ◽  
Koen Clays ◽  
John Fielden
Keyword(s):  
Linear Optics ◽  
Performance Limits ◽  
Trade Off ◽  
High Transparency ◽  
Non Linear Optics ◽  
New Class ◽  
Redox Active ◽  
Empirical Performance ◽  
Donor Acceptor ◽  
Nlo Chromophores

Organoimido polyoxometalates are a powerful new class of acceptor for non-linear optics. As a basis for donor–acceptor systems, they offer an excellent transparency/non-linearity trade-off and break through empirical performance limits for comparable organic materials.

A NEW CLASS OF ORGANOSILICON COMPOUNDS. SILICON ANALOGS OF CYCLOPENTADIENE

1961 ◽  
Vol 83 (17) ◽  
pp. 3716-3716 ◽  
Author(s):  
Robert A. Benkeser ◽  
Richard F. Grossman ◽  
Garth M. Stanton
Keyword(s):  
Organosilicon Compounds ◽  
New Class

scholarly journals Anonymous Stochastic Routing

2021 ◽  
Author(s):  
Mine Su Erturk ◽  
Kuang Xu
Keyword(s):  
Random Perturbation ◽  
Large Network ◽  
Trade Off ◽  
New Class ◽  
Stochastic Routing ◽  
Network Topologies ◽  
Entire Trajectory

We propose and analyze a recipient-anonymous stochastic routing model to study a fundamental trade-off between anonymity and routing delay. An agent wants to quickly reach a goal vertex in a network through a sequence of routing actions, whereas an overseeing adversary observes the agent’s entire trajectory and tries to identify the agent’s goal among those vertices traversed. We are interested in understanding the probability that the adversary can correctly identify the agent’s goal (anonymity) as a function of the time it takes the agent to reach it (delay). A key feature of our model is the presence of intrinsic uncertainty in the environment, so that each of the agent’s intended steps is subject to random perturbation and thus may not materialize as planned. Using large-network asymptotics, our main results provide near-optimal characterization of the anonymity–delay trade-off under a number of network topologies. Our main technical contributions are centered on a new class of “noise-harnessing” routing strategies that adaptively combine intrinsic uncertainty from the environment with additional artificial randomization to achieve provably efficient obfuscation.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

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