Synthesis of N-Acyl-N,O-acetals Mediated by Titanium Ethoxide

2013 ◽  
Vol 16 (1) ◽  
pp. 10-13 ◽  
Author(s):  
Min Li ◽  
Bingling Luo ◽  
Qi Liu ◽  
Yumin Hu ◽  
A. Ganesan ◽  
...  
Keyword(s):  
Titanium Ethoxide

Dip coating of titanium ethoxide solutions

1993 ◽  
Vol 18 (3) ◽  
pp. 141-147 ◽  
Author(s):  
Edward A. Hachfeld ◽  
Young-Joo Kim ◽  
Lorraine Falter Francis
Keyword(s):  
Dip Coating ◽  
Titanium Ethoxide

Spin coating of titanium ethoxide solutions

1997 ◽  
Vol 8 (1-3) ◽  
pp. 459-463 ◽  
Author(s):  
M. J. Van Bommel ◽  
T. N. M. Bernards
Keyword(s):  
Spin Coating ◽  
Titanium Ethoxide

Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng
Keyword(s):  
Thin Films ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Composition Control ◽  
Oxide Substrates ◽  
Temperature Deposition ◽  
Titanium Ethoxide

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

Preparation of BaTiO3 by Sol-Gel-Processing

1988 ◽  
Vol 121 ◽  
Author(s):  
G. G. Tomandl ◽  
H. Rösch ◽  
A. Stiegelschmitt
Keyword(s):  
Sintering Temperature ◽  
Sol Gel ◽  
Milling Process ◽  
Special Treatment ◽  
Green Density ◽  
Barium Acetate ◽  
Calcium And Magnesium ◽  
Titanium Ethoxide ◽  
Future Work ◽  
Gel Processing

ABSTRACTBarium acetate, titanium ethoxide, and the acetates of calcium and magnesium and zirconium-n-propoxide as additives, were dissolved in an acetic acid methanol mixture. By adding water, this sol was converted to a gel.Extended investigations of the calcination result in a crystalline barium tita-nate without other titanate phases, with a very small amount of carbonate and a negligible contents of free carbon. Aggregates could not be destroyed totally by the milling process. Therefore, the green density of the green bodies reaches only 60 to 65 %. Thus, a minimum sintering temperature of 1200° C was necessary to obtain a density of at least 95 %. In future work, a special treatment to destroy the aggregates must be developed to lower the sintering temperature.

scholarly journals Sulphated Oxides of Titanium Prepared from Titanium Ethoxide: Surface and Related Properties

2008 ◽  
Vol 26 (10) ◽  
pp. 803-813
Author(s):  
Adham R. Ramadan ◽  
Nahed Yacoub ◽  
Haguer Amin ◽  
Jehane Ragai
Keyword(s):  
Titanium Ethoxide

Metallorganic Cheamcal Vapor Deposition (Mocvd) of Titanium-Based Ferroelectric Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Jie Si ◽  
Chien H. Peng
Keyword(s):  
Lead Zirconate Titanate ◽  
Vapor Deposition ◽  
Spontaneous Polarization ◽  
Coercive Field ◽  
Lead Titanate ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Transparent Films ◽  
Titanium Ethoxide

AbstractUsing hot-walled metallorganic chemical vapor deposition (MOCVD), thin fihns of lead zirconate titanate (PZT), lead titanate (PbTiO3 or PT) and bismuth titanate (Bi4Ti3O12 or BiT) were successfully prepared. For each material, titanium ethoxide (Ti(C2H5O)4) was used as the precursor for the titanium source, while lead bis-tetramethylheptadione (Pb(thd)2), zirconium tetrakistetramethylheptadione (Zr(thd)4) and triphenyl bismuth (Bi(C6H5)3) were used as sources for lead, zirconium and bismuth, respectively. Dense, specular and highly transparent films were obtained for all three materials. Deposition conditions are given for each of the materials as well as the properties of the resulting films as determined by XRD, SEM and UV-VIS-NIR spectrophotometry. Ferroelectric properties are also given for the PZT and BiT films; for PZT (%Zr = 41; %Ti = 9) annealed at 600 °C, the spontaneous polarization, Ps, was 23 μC/cm2 and the coercive field, Ec, was 65 kV/cm; for BiT annealed at 550 °C, the spontaneous polarization, Ps, was 27 μC/cm2 and the coercive field, Ec, was 240 kV/cm.

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