scholarly journals Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

ACS Nano ◽  
2010 ◽  
Vol 4 (1) ◽  
pp. 524-528 ◽  
Author(s):  
Hisato Yamaguchi ◽  
Goki Eda ◽  
Cecilia Mattevi ◽  
HoKwon Kim ◽  
Manish Chhowalla
Keyword(s):  
Thin Films ◽  
Wafer Scale ◽  
Highly Uniform ◽  
Scale Deposition

scholarly journals Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Photon ◽  
Growth Parameters ◽  
Life Time ◽  
Correlation Factor ◽  
Low Density ◽  
Wafer Scale ◽  
Two Photon ◽  
Gaas Quantum Dot ◽  
Highly Uniform

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.

Wafer-scale, highly uniform, and well-arrayed suspended nanostructures for enhancing the performance of electronic devices

Nanoscale ◽  
2022 ◽  
Author(s):  
Zhi-Jun Zhao ◽  
Junseong Ahn ◽  
Dongheon Lee ◽  
Chan Bae Jeong ◽  
Mingu Kang ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Diverse Group ◽  
Wafer Scale ◽  
Highly Uniform

Suspended nanostructures play an important role in enhancing the performance of a diverse group of nanodevices. However, realizing a good arrangement and suspension for nanostructures of various shapes remains a...

Globally Aligned, Wafer-Scale Deposition of Carbon Nanotubes Via Interfacial Assembly

2020 ◽  
Vol MA2020-01 (7) ◽  
pp. 707-707
Author(s):  
Katherine R. Jinkins ◽  
Padma Gopalan ◽  
Michael S. Arnold
Keyword(s):  
Carbon Nanotubes ◽  
Interfacial Assembly ◽  
Wafer Scale ◽  
Scale Deposition

scholarly journals Engineering of self-rectifying filamentary resistive switching in LiNbO3 single crystalline thin film via strain doping

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiangui You ◽  
Kai Huang ◽  
Xiaomeng Zhao ◽  
Ailun Yi ◽  
Chen Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Contact ◽  
Homogeneous Distribution ◽  
Single Crystalline ◽  
Wafer Scale ◽  
Practical Applications ◽  
Crystalline Oxide ◽  
Order Of Magnitude ◽  
Switching Characteristics

AbstractThe abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO3 (LNO) single crystalline thin films are fabricated on Pt/SiO2/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2268-2276 ◽  
Author(s):  
Philip M. Campbell ◽  
Alexey Tarasov ◽  
Corey A. Joiner ◽  
Meng-Yen Tsai ◽  
Georges Pavlidis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale ◽  
P Type ◽  
Highly Uniform

scholarly journals Wafer-scale growth of VO2 thin films using a combinatorial approach

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Hai-Tian Zhang ◽  
Lei Zhang ◽  
Debangshu Mukherjee ◽  
Yuan-Xia Zheng ◽  
Ryan C. Haislmaier ◽  
...  
Keyword(s):  
Thin Films ◽  
Combinatorial Approach ◽  
Scale Growth ◽  
Wafer Scale ◽  
Vo2 Thin Films
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