Formation of Stacking Faults and the Screw Dislocation-Driven Growth: A Case Study of Aluminum Nitride Nanowires

ACS Nano ◽  
2013 ◽  
Vol 7 (12) ◽  
pp. 11369-11378 ◽  
Author(s):  
Fei Meng ◽  
Marc Estruga ◽  
Audrey Forticaux ◽  
Stephen A. Morin ◽  
Qiang Wu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Screw Dislocation ◽  
Stacking Faults

Construction of plastic contact deformation maps on ceramics: a case study on aluminum nitride

1996 ◽  
Vol 54 ◽  
pp. 636-637
Author(s):  
D. L. Callahan
Keyword(s):  
Plastic Deformation ◽  
Aluminum Nitride ◽  
Mechanical Response ◽  
Three Dimensional ◽  
Bright Field Image ◽  
Perfectly Plastic ◽  
Contrast Analysis ◽  
Deformation Patterns

Modern polishing, precision machining and microindentation techniques allow the processing and mechanical characterization of ceramics at nanometric scales and within entirely plastic deformation regimes. The mechanical response of most ceramics to such highly constrained contact is not predictable from macroscopic properties and the microstructural deformation patterns have proven difficult to characterize by the application of any individual technique. In this study, TEM techniques of contrast analysis and CBED are combined with stereographic analysis to construct a three-dimensional microstructure deformation map of the surface of a perfectly plastic microindentation on macroscopically brittle aluminum nitride.The bright field image in Figure 1 shows a lg Vickers microindentation contained within a single AlN grain far from any boundaries. High densities of dislocations are evident, particularly near facet edges but are not individually resolvable. The prominent bend contours also indicate the severity of plastic deformation. Figure 2 is a selected area diffraction pattern covering the entire indentation area.

Dislocations and Stacking Faults in Aluminum Nitride

1961 ◽  
Vol 32 (6) ◽  
pp. 1098-1100 ◽  
Author(s):  
P. Delavignette ◽  
H. B. Kirkpatrick ◽  
S. Amelinckx
Keyword(s):  
Aluminum Nitride ◽  
Stacking Faults

GROWTH MODES AND DEFECTS OF MANGANESE MERCURY THIOCYANATE CRYSTALS OBSERVED BY AFM

2009 ◽  
Vol 16 (01) ◽  
pp. 19-22
Author(s):  
Y. L. GENG ◽  
Z. H. SUN
Keyword(s):  
Atomic Force Microscopy ◽  
Screw Dislocation ◽  
Stacking Faults ◽  
Nucleation And Growth ◽  
Controlled Growth ◽  
Growth Mechanisms ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Nucleation Growth

Growth mechanisms and defects formation of the manganese mercury thiocyanate (MMTC) crystal have been investigated by atomic force microscopy (AFM). Both screw dislocation controlled growth and 2D nucleation growth occur on the {110} faces. Stacking faults are observed among dislocation hillocks and the formation of them probably results from the different crystallization orientations of different spirals. Hollow channels are found around the nucleation islands and the formation of them is due to the instability of the interface generated by the rapid nucleation and growth speeds.

Inversion Domain Boundaries and Oxygen Accommodation in Aluminum Nitride

1989 ◽  
Vol 167 ◽  
Author(s):  
R. A. Youngman ◽  
J. H. Harris ◽  
P. A. Labun ◽  
R. J. Graham ◽  
J. K. Weiss
Keyword(s):  
Aluminum Nitride ◽  
Domain Boundary ◽  
Stacking Faults ◽  
Interface Energy ◽  
Optical Methods ◽  
Extended Defect ◽  
Inversion Domain ◽  
Inversion Domain Boundaries ◽  
Structural Aspects

AbstractAluminum nitride is known to have a large affinity for oxygen as an impurity. At high levels (>∼4 wt/o) the oxygen is incorporated in the form of planar stacking faults where “pure” 2H AIN is regularly interspersed with a layer of oxygen at the faults. At oxygen levels lower than ∼ 4 wt/o the structure shows an expanded c-axis. The present authors have not observed this effect, rather a random distribution of stacking faults is observed along with another, more prevalent, extended defect identified as an inversion domain boundary (IDB). The IDBs are significantly aplanar (indicating a low interface energy), and often have precipitates and other, faceted defects associated with them. The role of these defects in oxygen accommodation in AIN has been investigated both structurally and chemically by electron optical methods (SEM, TEM, STEM, HREM, CBED, EDS, EELS, and CL-TEM). The structural nature of the boundaries, in the absence of oxygen, requires Al-Al or N-N bonding to occur with some frequency across the boundary. Such bonding is unlikely due to the excess energy required. Chemical analysis (EELS) and luminescence studies (CL-TEM) reveal that oxygen is often associated with the boundaries and may mediate the bonding at the boundary. A model is proposed for the IDB which includes structural aspects combined with considerations of stoichiometry in an effort to understand the origin and energetics of this defect.

scholarly journals Incoherent tilt grain boundaries stabilized by stacking faults and solute-cluster segregation: a case-study of an Mg-Gd alloy

2020 ◽  
Vol 8 (7) ◽  
pp. 268-274 ◽  
Author(s):  
Zhengqing Liu ◽  
Qi Qian ◽  
Yong Jiang ◽  
Yiren Wang ◽  
Yuman Zhu ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Stacking Faults ◽  
Solute Cluster
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