Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

ACS Nano ◽  
2013 ◽  
Vol 7 (6) ◽  
pp. 5360-5366 ◽  
Author(s):  
Cheng-Lin Tsai ◽  
Feng Xiong ◽  
Eric Pop ◽  
Moonsub Shim
Keyword(s):  
Carbon Nanotube ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits

Electronics ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 79
Author(s):  
Furqan Zahoor ◽  
Fawnizu Azmadi Hussin ◽  
Farooq Ahmad Khanday ◽  
Mohamad Radzi Ahmad ◽  
Illani Mohd Nawi ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Logic Circuits ◽  
Simulation Software ◽  
Combinational Logic ◽  
Access Memory ◽  
Combinational Logic Circuits

The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) have shown great promise for design of MVL based circuits, due to the fact that the scalable threshold voltage of CNTFETs can be utilized easily for the multiple voltage designs. In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. The designs of ternary half adder, ternary half subtractor, ternary full adder, and ternary full subtractor are evaluated while using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions, including different supply voltages, output load variation, and different operating temperatures. Finally, the proposed designs are compared with the state-of-the-art ternary designs. Based on the obtained simulation results, the proposed designs show a significant reduction in the transistor count, decreased cell area, and lower power consumption. In addition, due to the participation of RRAM, the proposed designs have advantages in terms of non-volatility.

scholarly journals Carbon Nanotube and Resistive Random Access Memory Based Unbalanced Ternary Logic Gates and Basic Arithmetic Circuits

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 104701-104717 ◽  
Author(s):  
Furqan Zahoor ◽  
Tun Zainal Azni Zulkifli ◽  
Farooq Ahmad Khanday ◽  
Sohiful Anuar Zainol Murad
Keyword(s):  
Carbon Nanotube ◽  
Random Access ◽  
Random Access Memory ◽  
Logic Gates ◽  
Resistive Random Access Memory ◽  
Arithmetic Circuits ◽  
Ternary Logic ◽  
Access Memory

Carbon Nanotube Field Effect Transistor and Resistive Random Access Memory based 2-bit Ternary Comparator

2021 ◽  
Author(s):  
Furqan Zahoor ◽  
Fawnizu Azmadi Hussin ◽  
Farooq Ahmad Khanday ◽  
Mohamad Radzi Ahmad ◽  
Illani Mohd Nawi ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Effect Transistor

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory
Sign in / Sign up

Export Citation Format

Share Document