Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

ACS Nano ◽  
2013 ◽  
Vol 7 (6) ◽  
pp. 5017-5023 ◽  
Author(s):  
Paul J. Simmonds ◽  
Christopher D. Yerino ◽  
Meng Sun ◽  
Baolai Liang ◽  
Diana L. Huffaker ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Band Gap ◽  
Tensile Strain ◽  
Bulk Band

scholarly journals Quantum funneling in blended multi-band gap core/shell colloidal quantum dot solar cells

2015 ◽  
Vol 107 (10) ◽  
pp. 103902 ◽  
Author(s):  
Darren C. J. Neo ◽  
Samuel D. Stranks ◽  
Giles E. Eperon ◽  
Henry J. Snaith ◽  
Hazel E. Assender ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Core Shell ◽  
Quantum Dot Solar Cells ◽  
Colloidal Quantum Dot ◽  
Multi Band

Inter-level carrier dynamics and photocurrent generation in large band gap quantum dot solar cell by multistep growth

2017 ◽  
Vol 171 ◽  
pp. 142-147 ◽  
Author(s):  
Vittorianna Tasco ◽  
Arianna Cretì ◽  
Antonietta Taurino ◽  
Adriano Cola ◽  
Massimo Catalano ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Band Gap ◽  
Carrier Dynamics ◽  
Photocurrent Generation

Strain-induced semimetal-to-semiconductor transition and indirect-to-direct band gap transition in monolayer 1T-TiS2

RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 83876-83879 ◽  
Author(s):  
Chengyong Xu ◽  
Paul A. Brown ◽  
Kevin L. Shuford
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Plane Strain ◽  
Material Properties ◽  
First Principles ◽  
Tensile Strain ◽  
First Principles Calculations ◽  
Direct Band Gap ◽  
Direct Band ◽  
Uniform Plane

We have investigated the effect of uniform plane strain on the electronic properties of monolayer 1T-TiS2using first-principles calculations. With the appropriate tensile strain, the material properties can be transformed from a semimetal to a direct band gap semiconductor.

Investigation of Quantum Dot Solar Cell Device Performance

2013 ◽  
Vol 1551 ◽  
pp. 137-142
Author(s):  
Neil S. Beattie ◽  
Guillaume Zoppi ◽  
Ian Farrer ◽  
Patrick See ◽  
Robert W. Miles ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Band Gap ◽  
Control Device ◽  
Open Circuit ◽  
Device Performance ◽  
Intermediate Band ◽  
Control Devices

ABSTRACTThe device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.

Solution-Phase Hybrid Passivation for Efficient Infrared-Band Gap Quantum Dot Solar Cells

2020 ◽  
Vol 12 (44) ◽  
pp. 49840-49848
Author(s):  
Chandan Mahajan ◽  
Ashish Sharma ◽  
Arup K. Rath
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Solution Phase ◽  
Infrared Band ◽  
Quantum Dot Solar Cells

Band gap engineering of FeS2 under biaxial strain: a first principles study

2014 ◽  
Vol 16 (44) ◽  
pp. 24466-24472 ◽  
Author(s):  
Pin Xiao ◽  
Xiao-Li Fan ◽  
Li-Min Liu ◽  
Woon-Ming Lau
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Tensile Strain ◽  
Biaxial Strain ◽  
Band Gap Engineering ◽  
First Principles Study ◽  
Maximum Value

The band gap increases with increasing tensile strain to its maximum value at 6% strain and then decreases.

Review on the degradation and device physics of quantum dot solar cells

2015 ◽  
Vol 29 (Supplement 1) ◽  
pp. 1530008 ◽  
Author(s):  
Elham N. Afshar ◽  
Rasoul Rouhi ◽  
Nima E. Gorji
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Conversion Efficiency ◽  
High Performance ◽  
Energy Conversion Efficiency ◽  
New Materials ◽  
Quantum Dot Solar Cells ◽  
Photon Conversion ◽  
The Stability

Briefly, we reviewed the latest progress in energy conversion efficiency and degradation rate of the quantum dot (QD) solar cells. QDs are zero dimension nanoparticles with tunable size and accordingly tunable band gap. The maximum performance of the most advanced QD solar cells was reported to be around 10%. Nevertheless, majority of research groups do not investigate the stability of such devices. QDs are cheaper replacements for silicon or other thin film materials with a great potential to significantly increase the photon conversion efficiency via two ways: (i) creating multiple excitons by absorbing a single hot photon, and (ii) formation of intermediate bands (IBs) in the band gap of the background semiconductor that enables the absorption of low energy photons (two-step absorption of sub-band gap photons). Apart from low conversion efficiency, QD solar cells also suffer from instability under real operation and stress conditions. Strain, dislocations and variation in size of the dots (under pressure of the other layers) are the main degradation resources. While some new materials (i.e. perovskites) showed an acceptable high performance, the QD devices are still inefficient with an almost medium rate of 4% (2010) to 10% (2015).

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