Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping

ACS Nano ◽  
2013 ◽  
Vol 7 (2) ◽  
pp. 1333-1341 ◽  
Author(s):  
Cheng-Kai Chang ◽  
Satender Kataria ◽  
Chun-Chiang Kuo ◽  
Abhijit Ganguly ◽  
Bo-Yao Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Band Gap Engineering ◽  
Chemical Vapor Deposited

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electronic Material ◽  
Boron Carbide ◽  
Band Gap ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Heterojunction Diodes

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

1999 ◽  
Vol 146 (8) ◽  
pp. 3092-3096 ◽  
Author(s):  
Kow‐Ming Chang ◽  
I‐Chung Deng ◽  
Hong‐Yi Lin
Keyword(s):  
Chemical Vapor ◽  
Tungsten Film ◽  
Chemical Vapor Deposited
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