Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

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Anthony Joseph Ross ◽  
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Thomas A. Friedmann

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Azmira Jannat ◽  
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Zhengjun Yao ◽  
...  

AbstractLarge-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.


2017 ◽  
Vol 56 (11) ◽  
pp. 110302
Author(s):  
Ja-Yeon Kim ◽  
Doo-Hyung Kim ◽  
Min-Ki Kwon

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