Inverse Rectification in Donor–Acceptor Molecular Heterojunctions

ACS Nano ◽  
2011 ◽  
Vol 5 (11) ◽  
pp. 9256-9263 ◽  
Author(s):  
Shannon K. Yee ◽  
Jibin Sun ◽  
Pierre Darancet ◽  
T. Don Tilley ◽  
Arun Majumdar ◽  
...  
Keyword(s):  
Donor Acceptor ◽  
Molecular Heterojunctions

Mixed donor-acceptor molecular heterojunctions for photovoltaic applications. II. Device performance

2005 ◽  
Vol 98 (12) ◽  
pp. 124903 ◽  
Author(s):  
Jiangeng Xue ◽  
Barry P. Rand ◽  
Soichi Uchida ◽  
Stephen R. Forrest
Keyword(s):  
Device Performance ◽  
Photovoltaic Applications ◽  
Donor Acceptor ◽  
Molecular Heterojunctions

Mixed donor-acceptor molecular heterojunctions for photovoltaic applications. I. Material properties

2005 ◽  
Vol 98 (12) ◽  
pp. 124902 ◽  
Author(s):  
Barry P. Rand ◽  
Jiangeng Xue ◽  
Soichi Uchida ◽  
Stephen R. Forrest
Keyword(s):  
Material Properties ◽  
Photovoltaic Applications ◽  
Donor Acceptor ◽  
Molecular Heterojunctions

Evidence of a donor-acceptor type transition in CuGaSe2

1980 ◽  
Vol 41 (7) ◽  
pp. 707-712 ◽  
Author(s):  
A. Poure ◽  
G. Aguero ◽  
G. Masse ◽  
J.P. Aicardi
Keyword(s):  
Type Transition ◽  
Donor Acceptor

Photoactive donor-acceptor thin films as prospective materials for evaporated bulk heterojunctions of molecular semiconductors

2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil
Keyword(s):  
Thin Films ◽  
Bulk Heterojunctions ◽  
Donor Acceptor ◽  
Molecular Semiconductors

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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