Reorientation of the High Mobility Plane in Pentacene-Based Carbon Nanotube Enabled Vertical Field Effect Transistors

ACS Nano ◽  
2010 ◽  
Vol 5 (1) ◽  
pp. 291-298 ◽  
Author(s):  
Mitchell A. McCarthy ◽  
Bo Liu ◽  
Ramesh Jayaraman ◽  
Stephen M. Gilbert ◽  
Do Young Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Vertical Field ◽  
Vertical Field Effect

N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers

2012 ◽  
Vol 100 (17) ◽  
pp. 173514 ◽  
Author(s):  
Po-Hsiang Wang ◽  
Bo Liu ◽  
Yu Shen ◽  
Ying Zheng ◽  
Mitchell A. McCarthy ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanoparticle ◽  
Vertical Field ◽  
Vertical Field Effect

Correlation Between On/Off Ratio and Electron Traps in Hole-Only Carbon-Nanotube-Enabled Vertical Field Effect Transistors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Mitchell Austin McCarthy ◽  
Bo Liu ◽  
Andrew Gabriel Rinzler
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strong Dependence ◽  
Relative Number ◽  
Charge Trapping ◽  
Electron Traps ◽  
Vertical Field ◽  
Vertical Field Effect ◽  
Future Work

AbstractSingle wall carbon nanotube enabled vertical field effect transistors (VFETs) are studied and the dependence of the on/off ratio on the relative number of electron traps is investigated. Current versus voltage measurements on several VFETs with varying interfacial trap densities in the vicinity of the nanotube network/polymer active layer junction are taken. It is found that the on/off ratio of the VFET changes from 1600 to 20 for typical operational currents as the onset gate voltage in the off-to-on transfer curve shifts from 94 V to 72 V. Such a strong dependence on trapped charge motivates future work to uncover the mechanism of charge trapping.

Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

2016 ◽  
Vol 29 (4) ◽  
pp. 1603858 ◽  
Author(s):  
Tessy Theres Baby ◽  
Manuel Rommel ◽  
Falk von Seggern ◽  
Pascal Friederich ◽  
Christian Reitz ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ink Jet Printing ◽  
Vertical Field ◽  
Ink Jet ◽  
Jet Printing ◽  
Vertical Field Effect

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures

2018 ◽  
Vol 30 (9) ◽  
pp. 1704435 ◽  
Author(s):  
Yong Seon Shin ◽  
Kiyoung Lee ◽  
Young Rae Kim ◽  
Hyangsook Lee ◽  
I. Min Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Vertical Field ◽  
Vertical Field Effect

Prediction of Alpha Particle Effect on 5-nm Vertical Field-Effect Transistors

2019 ◽  
Vol 66 (1) ◽  
pp. 806-809 ◽  
Author(s):  
Youngsoo Seo ◽  
Myounggon Kang ◽  
Jongwook Jeon ◽  
Hyungcheol Shin
Keyword(s):  
Alpha Particle ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Particle Effect ◽  
Vertical Field ◽  
Vertical Field Effect

Vertical field effect transistors realized by cleaved-edge overgrowth

2002 ◽  
Vol 13 (2-4) ◽  
pp. 920-924 ◽  
Author(s):  
F Ertl ◽  
T Asperger ◽  
R.A Deutschmann ◽  
W Wegscheider ◽  
M Bichler ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Field ◽  
Vertical Field Effect
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