Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers

Nano Letters ◽  
2010 ◽  
Vol 10 (1) ◽  
pp. 64-68 ◽  
Author(s):  
Hui Huang ◽  
Xiaomin Ren ◽  
Xian Ye ◽  
Jingwei Guo ◽  
Qi Wang ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Buffer Layers ◽  
Si Substrate ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers

2012 ◽  
Vol 359 ◽  
pp. 30-34 ◽  
Author(s):  
Jingwei Guo ◽  
Hui Huang ◽  
Yizheng Ding ◽  
Zhuoyu Ji ◽  
Ming Liu ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Si Substrate ◽  
Zinc Blende

scholarly journals In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (5) ◽  
pp. 2588-2595 ◽  
Author(s):  
Edmund Pickering ◽  
Arixin Bo ◽  
Haifei Zhan ◽  
Xiaozhou Liao ◽  
Hark Hoe Tan ◽  
...  
Keyword(s):  
Quality Factor ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Stacking Faults ◽  
Mechanical Resonance ◽  
Zinc Blende ◽  
Gaas Nanowires

Mechanical resonance of GaAs nanowires allows for measurement of the effect of stacking faults on Young's modulus and quality factor.

scholarly journals Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Nanoscale ◽  
2018 ◽  
Vol 10 (36) ◽  
pp. 17080-17091 ◽  
Author(s):  
Mahdi Zamani ◽  
Gözde Tütüncüoglu ◽  
Sara Martí-Sánchez ◽  
Luca Francaviglia ◽  
Lucas Güniat ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc ◽  
Zinc Blende Structure

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds.

Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth

2011 ◽  
Vol 9 (4) ◽  
pp. 041601-41604 ◽  
Author(s):  
郭经纬 Jingwei Guo ◽  
黄辉 Hui Huang ◽  
任晓敏 Xiaomin Ren ◽  
颜鑫 Xin Yan ◽  
蔡世伟 Shiwei Cai ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Vapor Liquid Solid ◽  
Zinc Blende ◽  
Free Zinc ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4459-4463 ◽  
Author(s):  
Dasa L. Dheeraj ◽  
Gilles Patriarche ◽  
Hailong Zhou ◽  
Thang B. Hoang ◽  
Anthonysamy F. Moses ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 876-882 ◽  
Author(s):  
Zhi Zhang ◽  
Kun Zheng ◽  
Zhen-Yu Lu ◽  
Ping-Ping Chen ◽  
Wei Lu ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Free Zinc ◽  
Inas Nanowires

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Tsuneo Ito ◽  
Yutaka Terada ◽  
Takashi Egawa
Keyword(s):  
Sapphire Substrate ◽  
Deep Level ◽  
Buffer Layers ◽  
Si Substrate ◽  
Electron Traps ◽  
Organic Vapor ◽  
Pair Number ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi–Insulating Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
Nabil Sghaier ◽  
Abdel K. Souifi ◽  
Jean-Marie Bluet ◽  
Manuel Berenguer ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Frequency Dispersion ◽  
Buffer Layers ◽  
Si Substrate ◽  
Substrate Interface ◽  
Si Substrates ◽  
Kink Effect ◽  
Parasitic Effect ◽  
Output Characteristics ◽  
Output Conductance

ABSTRACTThe aim of this work is to study the origin of parasitic phenomena in the output characteristics of 4H-SiC MESFETs on semi-insulating (SI) substrates with various buffer layers. Ids-Vds measurements as a function of temperature have first been performed. Different parasitic effects such as kink effect, hysteresis effect when the gate voltage is successively increased or decreased, or changes in the output characteristics after a high drain polarization are presented. Random Telegraph Signal (RTS) measurements and frequency dispersion of the output conductance have next been realized. From the obtained results, we propose that the parasitic effect on the output characteristics are correlated with the presence of deep levels located near the semi -insulating substrate interface. The main observed trap is tentatively attributed to the presence of Vanadium in the SI substrate.

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