Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4459-4463 ◽  
Author(s):  
Dasa L. Dheeraj ◽  
Gilles Patriarche ◽  
Hailong Zhou ◽  
Thang B. Hoang ◽  
Anthonysamy F. Moses ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Nondestructive Complete Mechanical Characterization of Zinc Blende and Wurtzite GaAs Nanowires Using Time-Resolved Pump–Probe Spectroscopy

Nano Letters ◽  
2016 ◽  
Vol 16 (8) ◽  
pp. 4792-4798 ◽  
Author(s):  
Pierre-Adrien Mante ◽  
Sebastian Lehmann ◽  
Nicklas Anttu ◽  
Kimberly A. Dick ◽  
Arkady Yartsev
Keyword(s):  
Mechanical Characterization ◽  
Time Resolved ◽  
Pump Probe ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Probe Spectroscopy

scholarly journals Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Nanoscale ◽  
2018 ◽  
Vol 10 (36) ◽  
pp. 17080-17091 ◽  
Author(s):  
Mahdi Zamani ◽  
Gözde Tütüncüoglu ◽  
Sara Martí-Sánchez ◽  
Luca Francaviglia ◽  
Lucas Güniat ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc ◽  
Zinc Blende Structure

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds.

Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers

Nano Letters ◽  
2010 ◽  
Vol 10 (1) ◽  
pp. 64-68 ◽  
Author(s):  
Hui Huang ◽  
Xiaomin Ren ◽  
Xian Ye ◽  
Jingwei Guo ◽  
Qi Wang ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Buffer Layers ◽  
Si Substrate ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

scholarly journals Synthesis and Characterization of CuZnSe2 Nanocrystals in Wurtzite, Zinc Blende, and Core–Shell Polytypes

2019 ◽  
Vol 31 (24) ◽  
pp. 10085-10093 ◽  
Author(s):  
Huan Ren ◽  
Miao Wang ◽  
Zhe Li ◽  
Fathima Laffir ◽  
Grace Brennan ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Core Shell ◽  
Zinc Blende

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 876-882 ◽  
Author(s):  
Zhi Zhang ◽  
Kun Zheng ◽  
Zhen-Yu Lu ◽  
Ping-Ping Chen ◽  
Wei Lu ◽  
...  
Keyword(s):  
Zinc Blende ◽  
Free Zinc ◽  
Inas Nanowires

Growth and characterization of defect free GaAs nanowires

2006 ◽  
Vol 287 (2) ◽  
pp. 504-508 ◽  
Author(s):  
Brent A. Wacaser ◽  
Knut Deppert ◽  
Lisa S. Karlsson ◽  
Lars Samuelson ◽  
Werner Seifert
Keyword(s):  
Gaas Nanowires

Growth and characterization of GaAs nanowires on Ge(1 1 1) substrates by selective-area MOVPE

2019 ◽  
Vol 506 ◽  
pp. 135-139 ◽  
Author(s):  
Yusuke Minami ◽  
Akinobu Yoshida ◽  
Junichi Motohisa ◽  
Katsuhiro Tomioka
Keyword(s):  
Selective Area ◽  
Gaas Nanowires

Synthesis and characterization of kinked GaAs nanowires by Sb surfactant

Vacuum ◽  
2021 ◽  
pp. 110778
Author(s):  
Yubin Kang ◽  
Xiaobing Hou ◽  
Jilong Tang ◽  
Xueying Chu ◽  
Kexue Li ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Gaas Nanowires

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

2016 ◽  
Vol 56 (2) ◽  
Author(s):  
Pavel Geydt ◽  
Prokhor A. Alekseev ◽  
Mikhail S. Dunaevskiy ◽  
Tuomas Haggrén ◽  
Joona-Pekko Kakko ◽  
...  
Keyword(s):  
Vertical Structure ◽  
Surface Passivation ◽  
Surface States ◽  
Electric Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Nanowires ◽  
Current Voltage

Current–voltage (I–V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I–V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I–V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.

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