Ordered Arrays of Vertically Aligned [110] Silicon Nanowires by Suppressing the Crystallographically Preferred Etching Directions

Nano Letters ◽  
2009 ◽  
Vol 9 (7) ◽  
pp. 2519-2525 ◽  
Author(s):  
Zhipeng Huang ◽  
Tomohiro Shimizu ◽  
Stephan Senz ◽  
Zhang Zhang ◽  
Xuanxiong Zhang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Ordered Arrays ◽  
Vertically Aligned

Vapor Detection Performance of Vertically Aligned, Ordered Arrays of Silicon Nanowires with a Porous Electrode

2011 ◽  
Vol 83 (12) ◽  
pp. 4724-4728 ◽  
Author(s):  
Christopher R. Field ◽  
Hyun Jin In ◽  
Nathan J. Begue ◽  
Pehr E. Pehrsson
Keyword(s):  
Silicon Nanowires ◽  
Porous Electrode ◽  
Detection Performance ◽  
Vapor Detection ◽  
Ordered Arrays ◽  
Vertically Aligned

Growing ordered arrays of vertically aligned copolymer nanowires for supercapacitors with high stability

2017 ◽  
Vol 21 (11) ◽  
pp. 3121-3127 ◽  
Author(s):  
Ming Qian ◽  
Nan Chen ◽  
Min Liu ◽  
Liang Cheng ◽  
Jing Li ◽  
...  
Keyword(s):  
High Stability ◽  
Ordered Arrays ◽  
Vertically Aligned

Decisive role of dopants in the optical properties of vertically aligned silicon nanowires prepared by metal-assist chemical etching

2021 ◽  
Vol 121 ◽  
pp. 111632
Author(s):  
Le Thanh Cong ◽  
Nguyen Thi Ngoc Lam ◽  
Doan Van Thuong ◽  
Ngo Ngoc Ha ◽  
Nguyen Duc Dung ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Decisive Role ◽  
Vertically Aligned

Multijunction a-Si:H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires

2017 ◽  
Vol 4 (7) ◽  
pp. 6797-6803 ◽  
Author(s):  
A.S. Gudovskikh ◽  
I.A. Morozov ◽  
D.A. Kudryashov ◽  
E.V. Nikitina ◽  
V. Sivakov
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Si Solar Cells ◽  
Vertically Aligned

Wetting and Surface Energy of Vertically Aligned Silicon Nanowires

2013 ◽  
Vol 13 (6) ◽  
pp. 3983-3989 ◽  
Author(s):  
S. Jana ◽  
S. Mondal ◽  
S. R. Bhattacharyya
Keyword(s):  
Surface Energy ◽  
Silicon Nanowires ◽  
Vertically Aligned

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

Ordered arrays of vertically aligned Au-nanotubes grafted with flocky Au/Ag-nanospikes based on electrodeposition and subsequent redox reaction

2015 ◽  
Vol 60 ◽  
pp. 104-108 ◽  
Author(s):  
Chao Hou ◽  
Guowen Meng ◽  
Zhulin Huang ◽  
Bin Chen ◽  
Chuhong Zhu ◽  
...  
Keyword(s):  
Redox Reaction ◽  
Ordered Arrays ◽  
Vertically Aligned

Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour–liquid–solid mode for nanoscale device applications

2015 ◽  
Vol 3 (44) ◽  
pp. 11577-11580 ◽  
Author(s):  
M. Ajmal Khan ◽  
Y. Ishikawa ◽  
I. Kita ◽  
K. Fukunaga ◽  
T. Fuyuki ◽  
...  
Keyword(s):  
Contact Angle ◽  
Silicon Nanowires ◽  
Si Substrate ◽  
Nanoscale Device ◽  
Device Applications ◽  
Vertically Aligned

Decreasing the contact angle between In NDs and the Si substrate helps to grow vertically aligned Si NWs with a diameter of 18 nm.

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