A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process

2012 ◽  
Vol 258 (20) ◽  
pp. 7989-7996 ◽  
Author(s):  
Tzuen-Wei Ho ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Silicon Nanowires ◽  
Reliable Method ◽  
Cooling Process ◽  
Vertically Aligned

scholarly journals A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Tzuen-Wei Ho ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Silicon Nanowires ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Process Conditions ◽  
Vertical Alignment ◽  
Cooling Process ◽  
Surface Reflection ◽  
Vertically Aligned ◽  
Novel Method ◽  
High Degree

In this study we grew silicon nanowires (SiNWs) on Si (111) substrate by gold-catalyzed vapor liquid solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all〈111〉family, including the vertical and the inclined, on Si (111). The effects of various process conditions, including SiCl4concentration, SiCl4feeding temperature, H2annealing, and ramp cooling, on the crystal quality and growth orientation of SiNWs, were studied to optimize the growth conditions. Furthermore, a novel method was developed to reliably grow vertically aligned SiNWs on Si (111) utilizing the principle of liquid phase epitaxy (LPE). A ramp-cooling process was employed to slowly precipitate the epitaxial Si seeds on Si (111) after H2annealing at 650°C. Then, after heating in SiCl4/H2up to 850°C to grow SiNWs, almost 100% vertically aligned SiNWs could be achieved reproducibly. The high degree of vertical alignment of SiNWs is effective in reducing surface reflection of solar light with the reflectance decreasing with increasing the SiNWs length. The vertically aligned SiNWs have good potentials for solar cells and nano devices.

Ordered Arrays of Vertically Aligned [110] Silicon Nanowires by Suppressing the Crystallographically Preferred Etching Directions

Nano Letters ◽  
2009 ◽  
Vol 9 (7) ◽  
pp. 2519-2525 ◽  
Author(s):  
Zhipeng Huang ◽  
Tomohiro Shimizu ◽  
Stephan Senz ◽  
Zhang Zhang ◽  
Xuanxiong Zhang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Ordered Arrays ◽  
Vertically Aligned

Decisive role of dopants in the optical properties of vertically aligned silicon nanowires prepared by metal-assist chemical etching

2021 ◽  
Vol 121 ◽  
pp. 111632
Author(s):  
Le Thanh Cong ◽  
Nguyen Thi Ngoc Lam ◽  
Doan Van Thuong ◽  
Ngo Ngoc Ha ◽  
Nguyen Duc Dung ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Decisive Role ◽  
Vertically Aligned

Multijunction a-Si:H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires

2017 ◽  
Vol 4 (7) ◽  
pp. 6797-6803 ◽  
Author(s):  
A.S. Gudovskikh ◽  
I.A. Morozov ◽  
D.A. Kudryashov ◽  
E.V. Nikitina ◽  
V. Sivakov
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Si Solar Cells ◽  
Vertically Aligned

Wetting and Surface Energy of Vertically Aligned Silicon Nanowires

2013 ◽  
Vol 13 (6) ◽  
pp. 3983-3989 ◽  
Author(s):  
S. Jana ◽  
S. Mondal ◽  
S. R. Bhattacharyya
Keyword(s):  
Surface Energy ◽  
Silicon Nanowires ◽  
Vertically Aligned

Dye-Improved Optical Absorption of Vertically Aligned Silicon Nanowire Arrays Synthesized by Electroless Etching of Silicon Wafer

2014 ◽  
Vol 895 ◽  
pp. 200-203 ◽  
Author(s):  
Hui Chiang Teoh ◽  
Sabar Derita Hutagalung
Keyword(s):  
Silicon Nanowires ◽  
High Performance ◽  
Silicon Nanowire ◽  
Incident Light ◽  
Electroless Etching ◽  
Dye Sensitized ◽  
Silicon Nanowire Arrays ◽  
Wide Range ◽  
Vertically Aligned ◽  
Si Wafer

Silicon nanowires (SiNWs) are important candidate for high performance electronic and optoelectronic devices due to their unique structures, electrical and optical properties. SiNWs were fabricated by silver-assisted electroless etching of Si wafer. Vertically aligned SiNW arrays with length about 8.75 μm and diameter of less than 90 nm have been fabricated. The reflectance of SiNWs without dye (12%) is greatly lower compared to bare Si wafer (25%). Therefore, SiNWs on Si substrate can be used as a good anti-reflection layer for a wide range of incident light. The reflectance of dye-sensitized SiNWs with red, green and blue dyes is 7%, 5.5%, and 5% respectively. The results confirmed that the reflectance of SiNWs with dye is much lower compared to SiNWs without dye and bare Si wafer. It was proven that dye on SiNWs can be used to reduce the reflectance (improved absorption) about 40% compared to SiNWs without dye.

Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour–liquid–solid mode for nanoscale device applications

2015 ◽  
Vol 3 (44) ◽  
pp. 11577-11580 ◽  
Author(s):  
M. Ajmal Khan ◽  
Y. Ishikawa ◽  
I. Kita ◽  
K. Fukunaga ◽  
T. Fuyuki ◽  
...  
Keyword(s):  
Contact Angle ◽  
Silicon Nanowires ◽  
Si Substrate ◽  
Nanoscale Device ◽  
Device Applications ◽  
Vertically Aligned

Decreasing the contact angle between In NDs and the Si substrate helps to grow vertically aligned Si NWs with a diameter of 18 nm.

scholarly journals The SU-8 spin-coating on silicon nanowires formed by cryogenic dry etching

2021 ◽  
Vol 2086 (1) ◽  
pp. 012078
Author(s):  
A I Baranov ◽  
D A Kudyashov ◽  
I A Morozov ◽  
K Yu Shugurov ◽  
A V Uvarov ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Spin Coating ◽  
Oxygen Plasma ◽  
Defect Formation ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Oxygen Plasma Treatment ◽  
Bulk Silicon ◽  
Near Surface ◽  
Vertically Aligned

Abstract Arrays of vertically aligned silicon nanowires were fabricated by cryogenic dry etching. The post-processing technology was developed to full coating of arrays of NWs by SU-8 and release the top side of SiNWs. The Schottky diodes were fabricated on arrays of SiNWs with and without SU-8 by gold evaporation. The cryogenic dry etching leads to defect formation with Ea=0.28 eV and concentration lower 5⋅1012 cm−3 in near-surface area in silicon, and no defect are detected in bulk silicon. However, oxygen plasma treatment used to release top side of SiNWs leads to increase of its concentration by two order and formation of defect with Ea=0.39 eV, σ = 1⋅10−16 cm2 and a concentration of 5⋅1014 cm−3 in a bulk of SiNWs deeper than 1 μm.

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