scholarly journals Epitaxy-Enabled Vapor–Liquid–Solid Growth of Tin-Doped Indium Oxide Nanowires with Controlled Orientations

Nano Letters ◽  
2014 ◽  
Vol 14 (8) ◽  
pp. 4342-4351 ◽  
Author(s):  
Youde Shen ◽  
Stuart Turner ◽  
Ping Yang ◽  
Gustaaf Van Tendeloo ◽  
Oleg I. Lebedev ◽  
...  
CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7256-7265 ◽  
Author(s):  
Joseph J. Huson ◽  
Tao Sheng ◽  
Ezekiel Ogle ◽  
Haitao Zhang

Jellyfish-like SiOx nanowires were formed in a reaction intermediate-induced vapor–liquid–solid process, which provides a new method for nanowire growth.


Nano Letters ◽  
2015 ◽  
Vol 15 (10) ◽  
pp. 6406-6412 ◽  
Author(s):  
Annop Klamchuen ◽  
Masaru Suzuki ◽  
Kazuki Nagashima ◽  
Hideto Yoshida ◽  
Masaki Kanai ◽  
...  

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 7033 ◽  
Author(s):  
Gang Meng ◽  
Takeshi Yanagida ◽  
Hideto Yoshida ◽  
Kazuki Nagashima ◽  
Masaki Kanai ◽  
...  

2006 ◽  
Vol 35 (2) ◽  
pp. 200-206 ◽  
Author(s):  
Pho Nguyen ◽  
Sreeram Vaddiraju ◽  
M. Meyyappan

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.


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