Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P-N Junctions Formed by N-Doping Chemical Vapor Deposition Grown Graphene

Nano Letters ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 3702-3708 ◽  
Author(s):  
Nan Liu ◽  
He Tian ◽  
Gregor Schwartz ◽  
Jeffrey B.-H. Tok ◽  
Tian-Ling Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Photodetector ◽  
Large Area ◽  
N Doping ◽  
Grown Graphene

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

Molecular n-doping of chemical vapor deposition grown graphene

2012 ◽  
Vol 22 (30) ◽  
pp. 15168 ◽  
Author(s):  
Arun Kumar Singh ◽  
Muhammad Waqas Iqbal ◽  
Vivek Kumar Singh ◽  
Muhammad Zahir Iqbal ◽  
Jae Hong Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
N Doping ◽  
Grown Graphene

Wetting behaviors and applications of metal-catalyzed CVD grown graphene

2018 ◽  
Vol 6 (45) ◽  
pp. 22437-22464 ◽  
Author(s):  
Afzal Khan ◽  
Mohammad Rezwan Habib ◽  
Rishi Ranjan Kumar ◽  
Sk Masiul Islam ◽  
V. Arivazhagan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
High Quality ◽  
Graphene Films ◽  
Cvd Growth ◽  
Grown Graphene ◽  
Metal Catalyzed ◽  
Wetting Behaviors

Metal-catalyzed chemical vapor deposition (CVD) growth of graphene is one of the most important techniques to produce high quality and large area graphene films.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible
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