scholarly journals Transport Studies of Dual-Gated ABC and ABA Trilayer Graphene: Band Gap Opening and Band Structure Tuning in Very Large Perpendicular Electric Fields

Nano Letters ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 369-373 ◽  
Author(s):  
K. Zou ◽  
Fan Zhang ◽  
C. Clapp ◽  
A. H. MacDonald ◽  
J. Zhu
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Electric Fields ◽  
Transport Studies ◽  
Gap Opening ◽  
Trilayer Graphene

Graphene/g-C3N4 bilayer: considerable band gap opening and effective band structure engineering

2014 ◽  
Vol 16 (9) ◽  
pp. 4230 ◽  
Author(s):  
Xinru Li ◽  
Ying Dai ◽  
Yandong Ma ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Gap Opening ◽  
Structure Engineering

Band-Gap Opening in Metallic Single-Walled Carbon Nanotubes by Encapsulation of an Organic Salt

2017 ◽  
Vol 129 (40) ◽  
pp. 12408-12412
Author(s):  
Belén Nieto-Ortega ◽  
Julia Villalva ◽  
Mariano Vera-Hidalgo ◽  
Luisa Ruiz-González ◽  
Enrique Burzurí ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Band Gap ◽  
Single Walled Carbon Nanotubes ◽  
Organic Salt ◽  
Single Walled Carbon ◽  
Gap Opening ◽  
Walled Carbon Nanotubes

Band-gap opening in metallic carbon nanotubes adsorbed on H∕Si(001)

2006 ◽  
Vol 89 (2) ◽  
pp. 023124 ◽  
Author(s):  
Jung-Yup Lee ◽  
Jun-Hyung Cho
Keyword(s):  
Carbon Nanotubes ◽  
Band Gap ◽  
Gap Opening

Band Structure and Thermoelectric Properties of Ni(x)Zn(1-x)Fe2O4

2021 ◽  
Vol 317 ◽  
pp. 28-34
Author(s):  
Joon Hoong Lim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Properties ◽  
Xrd Analysis ◽  
Valence Band Maximum ◽  
Solid State Method ◽  
Ni Content

Thermoelectric materials has made a great potential in sustainable energy industries, which enable the energy conversion from heat to electricity. The band structure and thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 have been investigated. The bulk pellets were prepared from analytical grade ZnO, NiO and Fe2O3 powder using solid-state method. It was possible to obtain high thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 by controlling the ratios of dopants and the sintering temperature. XRD analysis showed that the fabricated samples have a single phase formation of cubic spinel structure. The thermoelectric properties of Ni(x)Zn(1-x)Fe2O4 pellets improved with increasing Ni. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The electrical conductivity of Ni(x)Zn(1-x)Fe2O4 (x = 0.0) is (0.515 x10-3 Scm-1). The band structure shows that ZnxCu1-xFe2O4 is an indirect band gap material with the valence band maximum (VBM) at M and conduction band minimum (CBM) at A. The band gap of Ni(x)Zn(1-x)Fe2O4 increased with increasing Ni content. The increasing band gap correlated with the lower electrical conductivity. The thermal conductivity of Ni(x)Zn(1-x)Fe2O4 pellets decreased with increasing Ni content. The presence of Ni served to decrease thermal conductivity by 8 Wm-1K-1 over pure samples. The magnitude of the Seebeck coefficient for Ni(x)Zn(1-x)Fe2O4 pellets increased with increasing amounts of Ni. The figure of merit for Ni(x)Zn(1-x)Fe2O4 pellets and thin films was improved by increasing Ni due to its high Seebeck coefficient and low thermal conductivity.

NONRECIPROCAL ELECTROMAGNETIC DEVICES IN GYROMAGNETIC PHOTONIC CRYSTALS

2013 ◽  
Vol 28 (02) ◽  
pp. 1441010 ◽  
Author(s):  
ZHI-YUAN LI ◽  
RONG-JUAN LIU ◽  
LIN GAN ◽  
JIN-XIN FU ◽  
JIN LIAN
Keyword(s):  
Magnetic Field ◽  
Band Gap ◽  
Electromagnetic Waves ◽  
Experimental Studies ◽  
Magnetic Surface ◽  
Electromagnetic Properties ◽  
Edge States ◽  
Bragg Scattering ◽  
Electromagnetic Devices ◽  
Gap Opening

Gyromagnetic photonic crystal (GPC) offers a promising way to realize robust transport of electromagnetic waves against backscattering from various disorders, perturbations and obstacles due to existence of unique topological electromagnetic states. The dc magnetic field exerting upon the GPC brings about the time-reversal symmetry breaking, splits the band degeneracy and opens band gaps where the topological chiral edge states (CESs) arise. The band gap can originate either from long-range Bragg-scattering effect or from short-range localized magnetic surface plasmon resonance (MSP). These topological edge states can be explored to construct backscattering-immune one-way waveguide and other nonreciprocal electromagnetic devices. In this paper we review our recent theoretical and experimental studies of the unique electromagnetic properties of nonreciprocal devices built in GPCs. We will discuss various basic issues like experimental instrumental setup, sample preparations, numerical simulation methods, tunable properties against magnetic field, band degeneracy breaking and band gap opening and creation of topological CESs. We will investigate the unidirectional transport properties of one-way waveguide under the influence of waveguide geometries, interface morphologies, intruding obstacles, impedance mismatch, lattice disorders, and material dissipation loss. We will discuss the unique coupling properties between one-wave waveguide and resonant cavities and their application as novel one-way bandstop filter and one-way channel-drop filter. We will also compare the CESs created in the Bragg-scattering band gap and the MSP band gap under the influence of lattice disorders. These results can be helpful for designing and exploring novel nonreciprocal electromagnetic devices for optical integration and information processing.

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Sign in / Sign up

Export Citation Format

Share Document