Diameter-Dependent or Independent: Toward a Mechanistic Understanding of the Vapor–Liquid–Solid Si Nanowire Growth Rate

Nano Letters ◽  
2012 ◽  
Vol 12 (8) ◽  
pp. 4032-4036 ◽  
Author(s):  
Y. Y. Lü ◽  
H. Cui ◽  
G. W. Yang ◽  
C. X. Wang
Keyword(s):  
Growth Rate ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Si Nanowire ◽  
Mechanistic Understanding ◽  
Vapor Liquid

Diffusion suppression in vapor–liquid–solid Si nanowire growth by a barrier layer between the Au catalyst and substrate

2014 ◽  
Vol 404 ◽  
pp. 192-198
Author(s):  
Makoto Koto ◽  
Masatoshi Watanabe ◽  
Etsuko Sugawa ◽  
Tomohiro Shimizu ◽  
Shoso Shingubara
Keyword(s):  
Barrier Layer ◽  
Nanowire Growth ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Si Nanowire ◽  
Vapor Liquid

scholarly journals Лимитирующие режимы роста III-V нитевидных нанокристаллов

2020 ◽  
Vol 46 (17) ◽  
pp. 26
Author(s):  
В.Г. Дубровский ◽  
А.С. Соколовский ◽  
H. Hijazi
Keyword(s):  
Growth Rate ◽  
Generalized Equation ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Group V ◽  
Growth Environment ◽  
Group Iii ◽  
Deposition Surface ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Theoretical analysis is presented for vapor-liquid-solid growth of III-V nanowires in the presence of three competing processes of the group V deposition, surface diffusion of group III adatoms and nucleation of islands at the liquid-solid interface. A generalized equation for the nanowire growth rate is obtained which can be limited of one of the three processes depending on the growth environment. Different regimes of vapor-liquid-solid growth of III-V nanowires are analyzed depending on the group III and V influxes and nanowire radius.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

High repetition rate laser ablation for vapor–liquid–solid nanowire growth

2014 ◽  
Vol 14 (4) ◽  
pp. 614-620 ◽  
Author(s):  
A. Marcu ◽  
F. Stokker ◽  
R.R. Zamani ◽  
C.P. Lungu ◽  
C. Grigoriu
Keyword(s):  
Laser Ablation ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
High Repetition ◽  
Vapor Liquid

Fundamental Strategy to Succeed a Vapor-Liquid-Solid Nanowire Growth

2015 ◽  
Author(s):  
T. Yanagida ◽  
K. Nagashima ◽  
H. Yong ◽  
F. Zhuge ◽  
M. Kanai ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Guiding vapor–liquid–solid nanowire growth using SiO2

2009 ◽  
Vol 20 (14) ◽  
pp. 145303 ◽  
Author(s):  
Nathaniel J Quitoriano ◽  
Wei Wu ◽  
Theodore I Kamins
Keyword(s):  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Catalyst size limitation in vapor–liquid–solid ZnO nanowire growth using pulsed laser deposition

2012 ◽  
Vol 520 (14) ◽  
pp. 4626-4631 ◽  
Author(s):  
A. Marcu ◽  
L. Trupina ◽  
R. Zamani ◽  
J. Arbiol ◽  
C. Grigoriu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanowire Growth ◽  
Zno Nanowire ◽  
Vapor Liquid Solid ◽  
Size Limitation ◽  
Vapor Liquid

Reaction intermediate-induced vapor–liquid–solid growth of silicon oxide nanowires

CrystEngComm ◽  
2018 ◽  
Vol 20 (45) ◽  
pp. 7256-7265 ◽  
Author(s):  
Joseph J. Huson ◽  
Tao Sheng ◽  
Ezekiel Ogle ◽  
Haitao Zhang
Keyword(s):  
Silicon Oxide ◽  
New Method ◽  
Nanowire Growth ◽  
Vapor Liquid Solid ◽  
Oxide Nanowires ◽  
Reaction Intermediate ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Jellyfish-like SiOx nanowires were formed in a reaction intermediate-induced vapor–liquid–solid process, which provides a new method for nanowire growth.

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