Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 4484-4489 ◽  
Author(s):  
Chia-Chi Chang ◽  
Chun-Yung Chi ◽  
Maoqing Yao ◽  
Ningfeng Huang ◽  
Chun-Chung Chen ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Optical Characterization ◽  
Gaas Nanowires

scholarly journals Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates

2013 ◽  
Vol 4 ◽  
pp. 726-731 ◽  
Author(s):  
Gema López ◽  
Pablo R Ortega ◽  
Cristóbal Voz ◽  
Isidro Martín ◽  
Mónica Colina ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Surface Recombination Velocity ◽  
Carrier Injection ◽  
Si Substrates

The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300–1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm.

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

2016 ◽  
Vol 56 (2) ◽  
Author(s):  
Pavel Geydt ◽  
Prokhor A. Alekseev ◽  
Mikhail S. Dunaevskiy ◽  
Tuomas Haggrén ◽  
Joona-Pekko Kakko ◽  
...  
Keyword(s):  
Vertical Structure ◽  
Surface Passivation ◽  
Surface States ◽  
Electric Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Nanowires ◽  
Current Voltage

Current–voltage (I–V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I–V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I–V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.

Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires

2013 ◽  
Vol 113 (16) ◽  
pp. 164311 ◽  
Author(s):  
Yu. A. Pusep ◽  
H. Arakaki ◽  
C. A. de Souza ◽  
A. D. Rodrigues ◽  
C. M. Haapamaki ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Characterization ◽  
Gaas Nanowires

scholarly journals Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

2013 ◽  
Vol 114 (18) ◽  
pp. 183508 ◽  
Author(s):  
B. P. Falcão ◽  
J. P. Leitão ◽  
M. R. Correia ◽  
M. R. Soares ◽  
F. M. Morales ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Si Substrates ◽  
Gaas Nanowires ◽  
Mg Doped

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization

Optical Characterization of Monodispersed Aaqueous Cu2+-Doped CdS Nanoparticles Prepared Under Microwave Irradiation Conditions

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Optical Characterization ◽  
Cds Nanoparticles

Application of Kubelka-Munk model on the optical characterization of translucent dental zirconia

2021 ◽  
Vol 258 ◽  
pp. 123994
Author(s):  
Luciana M. Schabbach ◽  
Bruno C. dos Santos ◽  
Letícia S. De Bortoli ◽  
Márcio Celso Fredel ◽  
Bruno Henriques
Keyword(s):  
Optical Characterization

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition
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