Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4393-4399 ◽  
Author(s):  
Hossain M. Fahad ◽  
Casey E. Smith ◽  
Jhonathan P. Rojas ◽  
Muhammad M. Hussain
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Gate Stacks ◽  
Effect Transistor ◽  
Silicon Nanotube

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

2017 ◽  
Vol 5 (25) ◽  
pp. 6156-6162 ◽  
Author(s):  
Ni Zheng ◽  
Zhibin Shao ◽  
Feifei Xia ◽  
Tianhao Jiang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
High Resistance ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
One Step ◽  
Effect Transistor

A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

High-performance InGaAs junction field-effect transistor with P/Be co-implanted gate

1988 ◽  
Vol 9 (5) ◽  
pp. 205-207 ◽  
Author(s):  
K.-W. Wang ◽  
C.-L. Cheng ◽  
J. Long ◽  
D. Mitcham
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor

Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor

2021 ◽  
Vol 129 (14) ◽  
pp. 145106
Author(s):  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Mousam Charan Sahu ◽  
Sanjeev K. Gupta ◽  
Saroj Prasad Dash ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Free Field ◽  
Monolayer Mos2 ◽  
Effect Transistor

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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