Size- and Temperature-Dependent Charge Transport in PbSe Nanocrystal Thin Films

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3887-3892 ◽  
Author(s):  
Moon Sung Kang ◽  
Ayaskanta Sahu ◽  
David J. Norris ◽  
C. Daniel Frisbie
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Temperature Dependent

Bias and temperature dependent charge transport in high mobility cobalt-phthalocyanine thin films

2010 ◽  
Vol 96 (1) ◽  
pp. 013305 ◽  
Author(s):  
S. Samanta ◽  
D. K. Aswal ◽  
A. Singh ◽  
A. K. Debnath ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
High Mobility ◽  
Cobalt Phthalocyanine ◽  
Temperature Dependent

scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

Temperature dependent charge transport of acid-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films

2020 ◽  
Vol 128 (15) ◽  
pp. 155901
Author(s):  
Meenu Sharma ◽  
K. P. Maity ◽  
Sonam Rani ◽  
V. Prasad ◽  
I. Sameera ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Temperature Dependent

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

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