Hexagonal Single Crystal Domains of Few-Layer Graphene on Copper Foils

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1182-1189 ◽  
Author(s):  
Alex W. Robertson ◽  
Jamie H. Warner
Keyword(s):  
Single Crystal ◽  
Layer Graphene ◽  
Copper Foils ◽  
Few Layer Graphene

AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

2016 ◽  
Vol 369 ◽  
pp. 251-256 ◽  
Author(s):  
Apostolis Kordatos ◽  
Nikolaos Kelaidis ◽  
Sigiava Aminalragia Giamini ◽  
Jose Marquez-Velasco ◽  
Evangelia Xenogiannopoulou ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structure Characterization ◽  
Graphene Growth ◽  
Layer Graphene ◽  
Few Layer Graphene

Weak localization in few-layer graphene grown on copper foils by chemical vapor deposition

Carbon ◽  
2012 ◽  
Vol 50 (14) ◽  
pp. 5242-5246 ◽  
Author(s):  
Wenrong Wang ◽  
Liang Chen ◽  
Zhe Wang ◽  
Yuchen Wang ◽  
Tie Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Layer Graphene ◽  
Copper Foils ◽  
Few Layer Graphene

Fabrication of single-crystal few-layer graphene domains on copper by modified low-pressure chemical vapor deposition

CrystEngComm ◽  
2014 ◽  
Vol 16 (32) ◽  
pp. 7558-7563 ◽  
Author(s):  
Y. G. Shi ◽  
D. Wang ◽  
J. C. Zhang ◽  
P. Zhang ◽  
X. F. Shi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene

Few-layer graphene domains are fabricated by modified LPCVD on Cu and the growth mechanism is schematically shown in the figure.

Mechanical response of few-layer graphene films on copper foils

2012 ◽  
Vol 67 (3) ◽  
pp. 273-276 ◽  
Author(s):  
Jonathan Moghal ◽  
Yimin A. Wu ◽  
Jamie H. Warner
Keyword(s):  
Mechanical Response ◽  
Layer Graphene ◽  
Copper Foils ◽  
Graphene Films ◽  
Few Layer Graphene

scholarly journals Properties of Silicone Rubber-Based Composites Reinforced with Few-Layer Graphene and Iron Oxide or Titanium Dioxide

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1550
Author(s):  
Vineet Kumar ◽  
Anuj Kumar ◽  
Minseok Song ◽  
Dong-Joo Lee ◽  
Sung-Soo Han ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Titanium Dioxide ◽  
Iron Oxide ◽  
Stress Relaxation ◽  
Silicone Rubber ◽  
Room Temperature ◽  
Relaxation Rates ◽  
Layer Graphene ◽  
Few Layer Graphene ◽  
Mechanical Actuation

The increasing demand for polymer composites with novel or improved properties requires novel fillers. To meet the challenges posed, nanofillers such as graphene, carbon nanotubes, and titanium dioxide (TiO2) have been used. In the present work, few-layer graphene (FLG) and iron oxide (Fe3O4) or TiO2 were used as fillers in a room-temperature-vulcanized (RTV) silicone rubber (SR) matrix. Composites were prepared by mixing RTV-SR with nanofillers and then kept for vulcanization at room temperature for 24 h. The RTV-SR composites obtained were characterized with respect to their mechanical, actuation, and magnetic properties. Fourier-transform infrared spectroscopy (FTIR) analysis was performed to investigate the composite raw materials and finished composites, and X-ray photoelectron spectroscopy (XPS) analysis was used to study composite surface elemental compositions. Results showed that mechanical properties were improved by adding fillers, and actuation displacements were dependent on the type of nanofiller used and the applied voltage. Magnetic stress-relaxation also increased with filler amount and stress-relaxation rates decreased when a magnetic field was applied parallel to the deformation axes. Thus, this study showed that the inclusion of iron oxide (Fe3O4) or TiO2 fillers in RTV-SR improves mechanical, actuation, and magnetic properties.

scholarly journals Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Intrinsic Properties ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Layer Graphene ◽  
A Value ◽  
Few Layer Graphene

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

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