scholarly journals Scanning Gate Spectroscopy and Its Application to Carbon Nanotube Defects

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1055-1060 ◽  
Author(s):  
Steven R. Hunt ◽  
Danny Wan ◽  
Vaikunth R. Khalap ◽  
Brad L. Corso ◽  
Philip G. Collins
Keyword(s):  
Carbon Nanotube ◽  
Scanning Gate ◽  
Nanotube Defects

Fluorescent Carbon Nanotube Defects Manifest Substantial Vibrational Reorganization

2016 ◽  
Vol 120 (20) ◽  
pp. 11268-11276 ◽  
Author(s):  
Mijin Kim ◽  
Lyudmyla Adamska ◽  
Nicolai F. Hartmann ◽  
Hyejin Kwon ◽  
Jin Liu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nanotube Defects ◽  
Fluorescent Carbon

scholarly journals Impact of carbon nanotube defects on fracture mechanisms in ceramic nanocomposites

Carbon ◽  
2017 ◽  
Vol 115 ◽  
pp. 402-408 ◽  
Author(s):  
Yingchao Yang ◽  
Cristina Ramirez ◽  
Xing Wang ◽  
Zhixing Guo ◽  
Anton Tokranov ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Fracture Mechanisms ◽  
Nanotube Defects ◽  
Ceramic Nanocomposites

Platinum Catalysts Prepared with Functional Carbon Nanotube Defects and Its Improved Catalytic Performance for Methanol Oxidation

2006 ◽  
Vol 110 (24) ◽  
pp. 11775-11779 ◽  
Author(s):  
Jinhua Chen ◽  
Mingyong Wang ◽  
Bo Liu ◽  
Zhen Fan ◽  
Kunzai Cui ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Methanol Oxidation ◽  
Platinum Catalysts ◽  
Catalytic Performance ◽  
Nanotube Defects

Atomically resolved STM images of carbon nanotube defects produced byAr+irradiation

2005 ◽  
Vol 72 (4) ◽  
Author(s):  
Z. Osváth ◽  
G. Vértesy ◽  
L. Tapasztó ◽  
F. Wéber ◽  
Z. E. Horváth ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Nanotube Defects ◽  
Stm Images

ROLE OF DEFECTS IN CARBON NANOTUBE CIRCUITS

2002 ◽  
Vol 01 (03n04) ◽  
pp. 247-254
Author(s):  
A. T. JOHNSON ◽  
M. FREITAG ◽  
M. RADOSAVLJEVIC ◽  
S. V. KALININ ◽  
D. A. BONNELL
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Quantitative Agreement ◽  
Single Wall Carbon Nanotubes ◽  
Metallic State ◽  
Scanning Gate Microscopy ◽  
Electrostatic Doping ◽  
Scanning Gate ◽  
The Impact

We summarize recent results on the impact of defects on the electronic properties of single-wall carbon nanotubes. We probe the influence of defects on electron transport in CNFETs by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). Depletion surface potential of individual defects is quantified from the SGM-imaged defect radius as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage. In the "off" state, transport is first dominated by barriers at depleted defects. It becomes diffusive as the CNFET is turned on, and finally is quasi-ballistic in the regime of "degenerate electrostatic doping". Metallic nanotubes with good contacts show a metal-to-insulator crossover as the gate voltage is varied. In the metallic state we see quantitative agreement with the "twiston" scattering picture.

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