scholarly journals High Frequency Scanning Gate Microscopy and Local Memory Effect of Carbon Nanotube Transistors

Nano Letters ◽  
2005 ◽  
Vol 5 (5) ◽  
pp. 893-896 ◽  
Author(s):  
Cristian Staii ◽  
Alan T. Johnson ◽  
Rui Shao ◽  
Dawn A. Bonnell
Keyword(s):  
Carbon Nanotube ◽  
Memory Effect ◽  
High Frequency ◽  
Local Memory ◽  
Carbon Nanotube Transistors ◽  
Scanning Gate Microscopy ◽  
Frequency Scanning ◽  
Scanning Gate ◽  
Nanotube Transistors

High-frequency performance of multiple-channel carbon nanotube transistors

2007 ◽  
Vol 204 (6) ◽  
pp. 1808-1813 ◽  
Author(s):  
Kaoru Narita ◽  
Hiroo Hongo ◽  
Masahiko Ishida ◽  
Fumiyuki Nihey
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Multiple Channel ◽  
Carbon Nanotube Transistors ◽  
Nanotube Transistors ◽  
High Frequency Performance

Scanning Conductance Microscopy and High Frequency Scanning Gate Microscopy of Carbon Nanotubes and Polyethylene based Nanofibers

2004 ◽  
Vol 838 ◽  
Author(s):  
Cristian Staii ◽  
Rui Shao ◽  
Nicholas J. Pinto ◽  
Dawn A. Bonnell ◽  
Alan T. Johnson
Keyword(s):  
Polyethylene Oxide ◽  
High Frequency ◽  
Field Effect Transistor ◽  
Quantitative Model ◽  
Scanning Gate Microscopy ◽  
Frequency Scanning ◽  
Parallel Circuit ◽  
Scanning Gate ◽  
Effect Transistor ◽  
Single Wall Nanotubes

ABSTRACTWe present two new approaches that significantly enhance the analytic power of Scanning Conductance Microscopy (SCM) and Scanning Gate Microscopy (SGM). First, we present a quantitative model that explains the phase shifts observed in SCM, by considering the change in the total capacitance of the tip-sample-substrate system. We show excellent agreement with data on samples of (conducting) single wall nanotubes and insulating polyethylene oxide (PEO) nanofibers. This model is also used to determine the dielectric constant of PEO nanofibers, a general approach that can be extended to other dielectric nanowires. Second, we extend the SGM to frequencies up to 15MHz, and use it to image changes in the impedance of carbon nanotube field effect transistor (CNFET) circuits induced by the SGM-tip gate. We show that these measurements are consistent with a simple RC parallel circuit model of the CNFET, with a time constant of 0.3 μs.

scholarly journals In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors With Enhanced Stability

2021 ◽  
Vol 42 (3) ◽  
pp. 367-370
Author(s):  
Jorge A. Cardenas ◽  
Shiheng Lu ◽  
Nicholas X. Williams ◽  
James L. Doherty ◽  
Aaron D. Franklin
Keyword(s):  
Carbon Nanotube ◽  
Carbon Nanotube Transistors ◽  
Nanotube Transistors ◽  
Enhanced Stability
Sign in / Sign up

Export Citation Format

Share Document