Large-Scale Arrays of Single-Layer Graphene Resonators

Nano Letters ◽  
2010 ◽  
Vol 10 (12) ◽  
pp. 4869-4873 ◽  
Author(s):  
Arend M. van der Zande ◽  
Robert A. Barton ◽  
Jonathan S. Alden ◽  
Carlos S. Ruiz-Vargas ◽  
William S. Whitney ◽  
...  
2011 ◽  
Vol 98 (7) ◽  
pp. 071905 ◽  
Author(s):  
Chul Lee ◽  
Joo Youn Kim ◽  
Sukang Bae ◽  
Keun Soo Kim ◽  
Byung Hee Hong ◽  
...  

2013 ◽  
Vol 25 (19) ◽  
pp. 2746-2752 ◽  
Author(s):  
Min Wang ◽  
Sung Kyu Jang ◽  
Won-Jun Jang ◽  
Minwoo Kim ◽  
Seong-Yong Park ◽  
...  

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 158
Author(s):  
Jinfu Lin ◽  
Shulong Wang ◽  
Hongxia Liu ◽  
Kai Yin ◽  
Lei Wu ◽  
...  

This paper analyzes graphene irradiation effects using a molecular dynamic simulation software, large-scale atomic / molecular massively parallel simulator (LAMMPS). We propose a hypothesis for the effective range of incident ions based on simulation results of irradiation effects that were found using a suspended single-layer graphene. This explains the influence mechanism of irradiation density on the degree of material defects. This paper does key research on how copper substrate influences a single- and bi-layer graphene. The results show that for a single-layer graphene (SLG) the substrate increases the effective range of the incident ions. Within a certain range of the irradiation density, the substrate enhances the defect production on graphene in low-energy irradiation (<5 keV). However, due to the shielding effect of the substrate, the overall trend of graphene damage will be reduced. For the bi-layer graphene (BLG), the effect of the indirect action range is more obvious than that of the direct-action range. In the case of low irradiation density, the knock-on atoms of BLG are much less than suspended SLG.


2010 ◽  
Author(s):  
Paul L. McEuen ◽  
Jeevak M. Parpia ◽  
Harold G. Craighead

2014 ◽  
Vol 104 (4) ◽  
pp. 041904 ◽  
Author(s):  
Nak Woo Kim ◽  
Joo Youn Kim ◽  
Chul Lee ◽  
Sang Jin Kim ◽  
Byung Hee Hong ◽  
...  

2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.


2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.


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